Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 94, Issue 20, 2009, Pages

  Hosoi, Takuji ^a   Kutsuki, Katsuhiro ^a   Okamoto, Gaku ^a   Saito, Marina ^a   Shimura, Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR EXPOSURE; AU ELECTRODES; CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRICAL DEFECTS; ELECTRICAL PROPERTY; FLAT-BAND VOLTAGE; FLAT-BAND VOLTAGE SHIFT; GATE ELECTRODE DEPOSITION; IN-SITU; INTERFACE STATE DENSITY; INVERSION CAPACITANCE; LOW TEMPERATURES; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MINORITY CARRIER; MINORITY CARRIER GENERATION; MOS STRUCTURE; ORGANIC MOLECULES; THERMAL DESORPTION ANALYSIS; VACUUM-ANNEALING;

CAPACITANCE; CAPACITORS; ELECTRIC GENERATORS; FIELD EFFECT TRANSISTORS; GERMANIUM; HYDROCARBONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SURFACE CHEMISTRY; THERMAL DESORPTION; VACUUM DEPOSITION; WATER ANALYSIS;

MOS CAPACITORS;

EID: 65949085352     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3143627     Document Type: Article

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