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Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality

(6) Henkel, Christoph a Bethge, Ole a Abermann, Stephan b Puchner, Stefan c Hutter, Herbert a Bertagnolli, Emmerich a

a VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

b AIT AUSTRIAN INSTITUTE OF TECHNOLOGY (Austria)

c Kompetenzzentrum Automobil und Industrie Elektronik Gmbh (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PROCESS; DIELECTRIC INTERFACE; ELECTRICAL PROPERTY; ELECTRICAL QUALITY; GATE STACKS; INTERFACE TRAP DENSITY; OXIDATIVE TREATMENT; OXYGEN ENRICHMENT; OXYGEN TREATMENT;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GERMANIUM; OXYGEN; PHYSICAL VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

PLATINUM;

EID: 77958086741 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3500822 Document Type: Article

Times cited : (20)

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