TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer

Electrochemical and Solid-State Letters

Volumn 14, Issue 5, 2011, Pages

  Xie, Qi ^a   Musschoot, Jan ^a   Schaekers, Marc ^b   Caymax, Matty ^b   Delabie, Annelies ^b   Lin, Dennis ^b   Qu, Xin Ping ^c   Jiang, Yu Long ^c   Den Berghe, Sven Van ^d   Detavernier, Christophe ^a  

^a GHENT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c FUDAN UNIVERSITY   (China)

^d BELGIAN NUCLEAR RESEARCH CENTRE   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CAPACITANCE-EQUIVALENT THICKNESS; CAPACITANCE-VOLTAGE HYSTERESIS; DIELECTRIC BREAKDOWN VOLTAGES; ELECTRICAL PROPERTY; GATE LEAKAGE CURRENT DENSITY; GATE STACKS; GE SURFACES; IN-SITU; INTERFACE TRAP DENSITY; METAL OXIDE SEMICONDUCTOR; N-TYPE GE; PASSIVATION LAYER; PLASMA TREATMENT; SINGLE LAYER; TIO;

ATOMIC LAYER DEPOSITION; BISMUTH; CAPACITANCE; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; LOGIC GATES; MOS DEVICES; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTOR SWITCHES;

GERMANIUM;

EID: 79952502370     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3559770     Document Type: Article

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