SCOPUS 정보 검색 플랫폼

Volumn 13, Issue 9, 2010, Pages

Titania/alumina bilayer gate dielectrics for Ge MOS devices: Frequency- and temperature-dependent electrical characteristics

(2) Swaminathan, Shankar a McIntyre, Paul C a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CAPACITANCE DENSITY; CAPACITANCE DISPERSION; ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERISTIC; ELECTRON DIFFUSION; FREQUENCY-DEPENDENT; GENERATION-RECOMBINATION; METAL OXIDE SEMICONDUCTOR; SINGLE LAYER; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TIO; TRAPPING/DETRAPPING;

ALUMINUM; CAPACITANCE; DIELECTRIC MATERIALS; DISPERSIONS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM;

MOS DEVICES;

EID: 77954751551 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3457480 Document Type: Article

Times cited : (13)

References (19)

1
- 69249119394
- MRSBEA 0883-7694
- M. Heyns and W. Tsai, MRS Bull. MRSBEA 0883-7694, 34, 485 (2009).
- (2009) MRS Bull. , vol.34 , pp. 485
- Heyns, M.¹ Tsai, W.²

2
- 37249061772
- High-k/Ge MOSFETs for future nanoelectronics
- DOI 10.1016/S1369-7021(07)70350-4, PII S1369702107703504
- Y. Kamata, Mater. Today MTOUAN 1369-7021, 11, 30 (2008). 10.1016/S1369-7021(07)70350-4 (Pubitemid 350266412)
- (2008) Materials Today , vol.11 , Issue.1-2 , pp. 30-38
- Kamata, Y.¹

3
- 34548230096
- Effective electrical passivation of Ge(100) for high- k gate dielectric layers using germanium oxide
- DOI 10.1063/1.2773759
- A. Delabie, F. Bellenger, M. Houssa, T. Conard, S. V. Elshocht, M. Caymax, M. Heyns, and M. Meuris, Appl. Phys. Lett. APPLAB 0003-6951, 91, 082904 (2007). 10.1063/1.2773759 (Pubitemid 47318977)
- (2007) Applied Physics Letters , vol.91 , Issue.8 , pp. 082904
- Delabie, A.¹ Bellenger, F.² Houssa, M.³ Conard, T.⁴ Van Elshocht, S.⁵ Caymax, M.⁶ Heyns, M.⁷ Meuris, M.⁸

4
- 48249136210
- APPLAB 0003-6951. 10.1063/1.2959731
- H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, Appl. Phys. Lett. APPLAB 0003-6951, 93, 032104 (2008). 10.1063/1.2959731
- (2008) Appl. Phys. Lett. , vol.93 , pp. 032104
- Matsubara, H.¹ Sasada, T.² Takenaka, M.³ Takagi, S.⁴

5
- 0008917498
- APPLAB 0003-6951. 10.1063/1.126309
- K. Prabhakaran, F. Maeda, Y. Watanabe, and T. Ogino, Appl. Phys. Lett. APPLAB 0003-6951, 76, 2244 (2000). 10.1063/1.126309
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2244
- Prabhakaran, K.¹ Maeda, F.² Watanabe, Y.³ Ogino, T.⁴

6
- 77954729605
- last accessed Jan 2010
- www.itrs.net, last accessed Jan 2010.

7
- 77749254845
- APPLAB 0003-6951. 10.1063/1.3313946
- S. Swaminathan, M. Shandalov, Y. Oshima, and P. C. McIntyre, Appl. Phys. Lett. APPLAB 0003-6951, 96, 082904 (2010). 10.1063/1.3313946
- (2010) Appl. Phys. Lett. , vol.96 , pp. 082904
- Swaminathan, S.¹ Shandalov, M.² Oshima, Y.³ McIntyre, P.C.⁴

8
- 39749167824
- On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
- DOI 10.1109/TED.2007.912365
- K. Martens, C. Chi On, G. Brammertz, B. De Jaeger, D. Kuzum, M. Meuris, M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes, IEEE Trans. Electron Devices IETDAI 0018-9383, 55, 547 (2008). 10.1109/TED.2007.912365 (Pubitemid 351297540)
- (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.2 , pp. 547-556
- Martens, K.¹ Chui, C.O.² Brammertz, G.³ De Jaeger, B.⁴ Kuzum, D.⁵ Meuris, M.⁶ Heyns, M.M.⁷ Krishnamohan, T.⁸ Saraswat, K.⁹ Maes, H.E.¹⁰ Groeseneken, G.¹¹

9
- 20844445051
- 2 -Ge metal-insulator- semiconductor capacitors
- DOI 10.1063/1.1944227, 223507
- A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou, and A. Sotiropoulos, Appl. Phys. Lett. APPLAB 0003-6951, 86, 223507 (2005). 10.1063/1.1944227 (Pubitemid 40861635)
- (2005) Applied Physics Letters , vol.86 , Issue.22 , pp. 1-3
- Dimoulas, A.¹ Vellianitis, G.² Mavrou, G.³ Evangelou, E.K.⁴ Sotiropoulos, A.⁵

10
- 0004277486
- Cha, John Wiley & Sons, New York
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology, Chap., John Wiley & Sons, New York (1981).
- (1981) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

11
- 21544480403
- JAPIAU 0021-8979. 10.1063/1.353777
- D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, J. Appl. Phys. JAPIAU 0021-8979, 73, 5058 (1993). 10.1063/1.353777
- (1993) J. Appl. Phys. , vol.73 , pp. 5058
- Fleetwood, D.M.¹ Winokur, P.S.² Reber, Jr.R.A.³ Meisenheimer, T.L.⁴ Schwank, J.R.⁵ Shaneyfelt, M.R.⁶ Riewe, L.C.⁷

12
- 0000082343
- JAPIAU 0021-8979. 10.1063/1.368384
- N. Bhat and K. C. Saraswat, J. Appl. Phys. JAPIAU 0021-8979, 84, 2722 (1998). 10.1063/1.368384
- (1998) J. Appl. Phys. , vol.84 , pp. 2722
- Bhat, N.¹ Saraswat, K.C.²

13
- 77954756385
- Unpublished work
- S. Swaminathan, Y. Oshima, and P. C. McIntyre, Unpublished work.
- Swaminathan, S.¹ Oshima, Y.² McIntyre, P.C.³

14
- 79956031814
- 2 gate dielectric stacks
- DOI 10.1063/1.1435411
- Z. Xu, M. Houssa, S. D. Gendt, and M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951, 80, 1975 (2002). 10.1063/1.1435411 (Pubitemid 34326258)
- (2002) Applied Physics Letters , vol.80 , Issue.11 , pp. 1975
- Xu, Z.¹ Houssa, M.² De Gendt, S.³ Heyns, M.⁴

15
- 0015671671
- JAPIAU 0021-8979. 10.1063/1.1662016
- C. Svensson and I. Lundstrom, J. Appl. Phys. JAPIAU 0021-8979, 44, 4657 (1973). 10.1063/1.1662016
- (1973) J. Appl. Phys. , vol.44 , pp. 4657
- Svensson, C.¹ Lundstrom, I.²

16
- 0000954294
- JAPIAU 0021-8979. 10.1063/1.373587
- M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. JAPIAU 0021-8979, 87, 8615 (2000). 10.1063/1.373587
- (2000) J. Appl. Phys. , vol.87 , pp. 8615
- Houssa, M.¹ Tuominen, M.² Naili, M.³ Afanas'Ev, V.⁴ Stesmans, A.⁵ Haukka, S.⁶ Heyns, M.M.⁷

17
- 10844282779
- High dielectric constant oxides
- DOI 10.1051/epjap:2004206
- J. Robertson, Eur. Phys. J.: Appl. Phys. EPAPFV 1286-0042, 28, 265 (2004). 10.1051/epjap:2004206 (Pubitemid 40002196)
- (2004) EPJ Applied Physics , vol.28 , Issue.3 , pp. 265-291
- Robertson, J.¹

18
- 0004005306
- John Wiley & Sons, New York
- S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York (1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

19
- 4644326865
- CCHRAM 0010-8545. 10.1016/j.ccr.2004.04.001
- J. Nelson and R. E. Chandler, Coord. Chem. Rev. CCHRAM 0010-8545, 248, 1181 (2004). 10.1016/j.ccr.2004.04.001
- (2004) Coord. Chem. Rev. , vol.248 , pp. 1181
- Nelson, J.¹ Chandler, R.E.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.