H2S molecular beam passivation of Ge(0 0 1)

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 399-402

  Merckling, C ^a   Chang, Y C ^b,c   Lu, C Y ^b,d   Penaud, J ^e   El Kazzi, M ^f   Bellenger, F ^a,b   Brammertz, G ^a   Hong, M ^c   Kwo, J ^c   Meuris, M ^a   Dekoster, J ^a   Heyns, M M ^a,b   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e Riber   (France)

^f SUN Synchrotron   (France)

Author keywords

H2S; High semiconductors; Molecular beam epitaxy; Passivation

Indexed keywords

CMOS CIRCUITS; ELECTRICAL PASSIVATION; GE(0 0 1); H2S; HIGH MOBILITY; HIGH-K GATE DIELECTRICS; IN-SITU; INTERFACE STATE DENSITY; SEMI-CONDUCTOR SURFACES; ULTRA-THIN; XPS ANALYSIS;

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; EPITAXIAL GROWTH; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOS CAPACITORS;

PASSIVATION;

EID: 79751533891     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.09.012     Document Type: Conference Paper

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