Interface studies of ALD-grown metal oxide insulators on Ge and III-V semiconductors (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1536-1539

  McIntyre, Paul C ^a   Oshima, Yasuhiro ^a,b   Kim, Eunji ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b Tokyo Electron US Holdings Inc   (United States)

Author keywords

ALD; Defects; Germanium; High k; III V semiconductor; Interface; Metal oxide

Indexed keywords

ALD; HIGH-K; III-V SEMICONDUCTOR; INTERFACE; METAL OXIDE;

ALUMINUM; CAPACITANCE; CHEMICAL BONDS; DEFECTS; GERMANIUM; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS CAPACITORS; SEMICONDUCTING GERMANIUM; THERMAL DESORPTION;

SURFACE CHEMISTRY;

EID: 67349197268     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.081     Document Type: Article

References (20)

1. Sedgwick T.O. J. Appl. Phys. 39 (1968) 5066
2. Spicer W.E., et al. J. Vac. Sci. Technol. 17 (1980) 1019
3. Delabie A., et al. Appl. Phys. Lett. 91 (2007) 082904
4. Kuzum D., et al. IEEE Electron. Dev. Lett. 29 (2008) 328
5. Sasada T., Matsubaru H., Takenaka M., and Takagi S. Solid State Dev. Meet. Ext. Abs. (2008) 12
6. Houssa M., et al. Appl. Phys. Lett. 93 (2008) 161909
7. Oshima Y., et al. J. Electrochem. Soc. 155 (2008) G304
8. Sugawara T., Sreenivasan R., and McIntyre P.C. J. Vac. Sci. Technol. B 24 (2006) 2442
9. Y. Oshima et al., Appl. Phys. Lett., in press.
10. Fischer D., and Kersch A. Appl. Phys. Lett. 92 (2008) 012908
11. Tsipas P., et al. Appl. Phys. Lett. 93 (2008) 082904
12. Benamara Z., et al. Mater. Chem. Phys. 62 (2000) 273
13. Takagi S. Microelectron. Eng. 84 (2007) 2314
14. Stesmans A., and Afanas'ev V.V. In: Dimoulas A., Gusev E., McIntyre P.C., and Heyns M. (Eds). Advanced Gate Stacks for High-Mobility Semiconductors (2007), Springer, Berlin 211
15. Weber J.R., Janotti A., Rinke P., and Van de Walle C.G. Appl. Phys. Lett. 91 (2007) 142101
16. Ho M.-T., et al. Appl. Phys. Lett. 87 (2005) 133103
17. Afanas'ev V.V., et al. Appl. Phys. Lett. 92 (2008) 022109
18. E. Kim et al., unpublished.
19. Yeo Y., King T., and Hu C. J. Appl. Phys. 92 (2002) 7266
20. Johnson R.S., Lucovsky G., and Baumvol I. J. Vac. Sci. Technol. A 19 (2001) 1353