메뉴 건너뛰기




Volumn 252, Issue 5, 2015, Pages 1050-1062

Extending group-III nitrides to the infrared: Recent advances in InN

Author keywords

Doping; InN; Molecular beam epitaxy; Nanowires; Surfaces; Thin films

Indexed keywords

DOPING (ADDITIVES); ELECTRONS; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; NANOWIRES; NITRIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; SURFACES; THIN FILMS;

EID: 84929118532     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201451628     Document Type: Article
Times cited : (35)

References (146)
  • 15
  • 102
    • 84929115595 scopus 로고    scopus 로고
    • International Workshop on Nitride Semiconductors, Sapporo, Japan
    • X. Wang, S. Liu, N. Ma, B. Shen, and A. Yoshikawa, International Workshop on Nitride Semiconductors, Sapporo, Japan, 2012.
    • (2012)
    • Wang, X.1    Liu, S.2    Ma, N.3    Shen, B.4    Yoshikawa, A.5
  • 107
    • 33748417557 scopus 로고    scopus 로고
    • F. Glas, Phys. Rev. B 74, 121302(R) (2006).
    • (2006) Phys. Rev. B , vol.74 , pp. 121302
    • Glas, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.