Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering

Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

  Cusco R ^a   Domnech Amador N ^a   Artus L ^a   Gotschke, T ^b,c   Jeganathan, K ^b,d   Stoica, T ^b   Calarco, R ^b,c  

^a INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^d BHARATHIDASAN UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED MODE; ELECTRON DENSITIES; INN NANOWIRES; LONGITUDINAL OPTICAL; MG-DOPED; PHONON-PLASMON COUPLED MODE; RAMAN PEAK; RESIDUAL ELECTRON DENSITIES;

CARRIER CONCENTRATION; DENSITY FUNCTIONAL THEORY; ELECTRON DENSITY MEASUREMENT; ELECTRONS; RAMAN SCATTERING; SECONDARY BATTERIES; SILICON;

NANOWIRES;

EID: 78650652148     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3520643     Document Type: Article

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