Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Simpkins, B S ^a   Mastro, M A ^a   Eddy Jr , C R ^a   Hite, J K ^a   Pehrsson, P E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BAND EDGE; CHARACTERISTIC ENERGY; CONDUCTION MECHANISM; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HIGHER-DIMENSIONAL; LOW-DIMENSIONAL MATERIALS; MOBILE CARRIERS; NEAR-SURFACE; SPACE-CHARGE-LIMITED CURRENT;

CARRIER CONCENTRATION; CARRIER TRANSPORT; CHARACTERIZATION; EXTRACTION; FIELD EFFECT TRANSISTORS; FLUXES; GALLIUM NITRIDE; NANOWIRES;

MATERIALS PROPERTIES;

EID: 80052396090     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3622145     Document Type: Article

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