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Volumn 23, Issue 41, 2012, Pages

Observation of phonon sideband emission in intrinsic InN nanowires: A photoluminescence and micro-Raman scattering study

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PEAKS; INN NANOWIRES; LO PHONONS; MICRO-RAMAN SCATTERING; NARROW-LINE WIDTH; PHONON SPECTRUM; PHOTOLUMINESCENCE PEAK; RESIDUAL ELECTRON DENSITIES; SURFACE ELECTRON ACCUMULATION;

EID: 84867018823     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/41/415706     Document Type: Article
Times cited : (16)

References (36)
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  • 7
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  • 17
    • 34547796436 scopus 로고    scopus 로고
    • 10.1002/pssb.200675628 0370-1972 b
    • Calleja E et al 2007 Phys. Status Solidi b 244 2816-37
    • (2007) Phys. Status Solidi , vol.244 , Issue.8 , pp. 2816-2837
    • Calleja, E.1
  • 28
    • 30144433397 scopus 로고    scopus 로고
    • Recombination mechanism of photoluminescence in InN epilayers
    • DOI 10.1016/j.ssc.2005.11.013, PII S003810980500921X
    • Fu S P, Chen Y F and Tan K 2006 Solid State Commun. 137 203-7 (Pubitemid 43052836)
    • (2006) Solid State Communications , vol.137 , Issue.4 , pp. 203-207
    • Fu, S.P.1    Chen, Y.F.2    Tan, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.