Giant reduction of InN surface electron accumulation: Compensation of surface donors by Mg dopants

Physical Review Letters

Volumn 109, Issue 24, 2012, Pages

  Linhart, W M ^a   Chai, J ^b,f   Morris, R J H ^a   Dowsett, M G ^a   McConville, C F ^a   Durbin, S M ^b,c,d   Veal, T D ^e  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

^c MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

^d State University of New York   (United States)

^e UNIVERSITY OF LIVERPOOL   (United Kingdom)

^f GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; ELECTRON ACCUMULATION; INDIUM NITRIDE; MG CONCENTRATIONS; NEAR-SURFACE; SHEET DENSITY; SHEET ELECTRON DENSITY; SURFACE ELECTRON ACCUMULATION; X RAY PHOTOEMISSION SPECTROSCOPY;

OPTOELECTRONIC DEVICES; PHOTOELECTRON SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

FERMI LEVEL;

EID: 84870932308     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.247605     Document Type: Article

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