InGaN-based multi-quantum-well-structure laser diodes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 1 B, 1996, Pages

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Nagahama, Shin ichi ^a   Iwasa, Naruhito ^a   Yamada, Takao ^a   Matsushita, Toshio ^a   Kiyoku, Hiroyuki ^a   Sugimoto, Yasunobu ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ETCHING; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR LASERS;

EID: 0029779805     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l74     Document Type: Article

References (17)