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Volumn 4, Issue 7, 2007, Pages 2423-2427
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Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARACTERISATION;
ELECTRON DISTRIBUTIONS;
HALL-EFFECT MEASUREMENTS;
INDIUM NITRIDE;
MAGNETIC FIELD DATA;
MULTIPLE CARRIER TRANSPORT;
NITRIDE SEMICONDUCTORS;
QUANTITATIVE MOBILITY SPECTRUM ANALYSIS;
SURFACE ACCUMULATION;
CRYSTAL GROWTH;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENTS;
ELECTRONS;
EPITAXIAL GROWTH;
GALVANOMAGNETIC EFFECTS;
HALL EFFECT;
HALL MOBILITY;
INDIUM;
MAGNETIC FIELD MEASUREMENT;
MAGNETIC FIELDS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
NITRIDES;
SEMICONDUCTOR MATERIALS;
SEMICONDUCTOR QUANTUM WIRES;
SPECTRUM ANALYZERS;
MAGNETIC FIELD EFFECTS;
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EID: 40849130926
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200674780 Document Type: Conference Paper |
Times cited : (14)
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References (9)
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