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Volumn 107, Issue 11, 2010, Pages

Hole transport and photoluminescence in Mg-doped InN

(11) Miller, N a,b Ager III, J W a Smith, H M a,b Mayer, M A a,b Yu, K M a Haller, E E a,b Walukiewicz, W a Schaff, W J c Gallinat, C d Koblmuller G d Speck, J S d

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b Lawrence Berkeley National Laboratory (United States)

c Cornell University (United States)

d University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTING FILMS; ELECTRICAL MEASUREMENT; ELECTRON TRAPPING; HOLE CONDUCTIVITY; HOLE TRANSPORTS; INN FILMS; MAJORITY CARRIERS; MG CONCENTRATIONS; MG-DOPED; P-TYPE; PARALLEL CONDUCTION MODELS; SURFACE ACCUMULATION; SURFACE ELECTRON ACCUMULATION; THERMOPOWER MEASUREMENTS; VALENCE BAND EDGES;

BINDING ENERGY; CRYSTAL GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SECONDARY BATTERIES; SEMICONDUCTOR QUANTUM WELLS;

CONDUCTIVE FILMS;

EID: 77953623658 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427564 Document Type: Article

Times cited : (65)

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