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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 481-485

Physical properties of InN with the band gap energy of 1.1 eV

(7) Inushima, T a Mamutin, V V b Vekshin, V A b Ivanov, S V b Sakon, T c Motokawa, M c Ohoya, S d

a TOKAI UNIVERSITY (Japan)

b IOFFE INSTITUTE (Russian Federation)

c TOHOKU UNIVERSITY (Japan)

d Kanagawa Industrial Technical Research Institute (Japan)

Author keywords

A1. Characterization; A3.Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR DOPING; SUBSTRATES;

BAND GAP ENERGY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035398655 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00747-3 Document Type: Conference Paper

Times cited : (233)

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