Effect of Mg doping on the structural and free-charge carrier properties of InN films

Journal of Applied Physics

Volumn 115, Issue 16, 2014, Pages

  Xie, M Y ^a   Ben Sedrine, N ^a   Schoche S ^b   Hofmann, T ^b   Schubert, M ^b   Hung, L ^a   Monemar, B ^a   Wang, X ^c   Yoshikawa, A ^d,e   Wang, K ^f   Araki, T ^f   Nanishi, Y ^f,g   Darakchieva, V ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c PEKING UNIVERSITY   (China)

^d CHIBA UNIVERSITY   (Japan)

^e KOGAKUIN UNIVERSITY   (Japan)

^f RITSUMEIKAN UNIVERSITY   (Japan)

^g Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; ELECTRONS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION; ZINC SULFIDE;

BROADENING PARAMETERS; FREE ELECTRON CONCENTRATION; HIGH ELECTRON MOBILITY; HIGH RESOLUTION X RAY DIFFRACTION; INFRARED SPECTROSCOPIC ELLIPSOMETRY; LOW DEFECT DENSITIES; N-TYPE CONDUCTIVITY; STRUCTURAL CHARACTERISTICS;

SEMICONDUCTOR DOPING;

EID: 84900013078     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4871975     Document Type: Article

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