RF performance and avalanche breakdown analysis of InN tunnel FETs

IEEE Transactions on Electron Devices

Volumn 61, Issue 10, 2014, Pages 3405-3410

  Ghosh, Krishnendu ^a   Singisetti, Uttam ^a  

^a UNIVERSITY AT BUFFALO   (United States)

Author keywords

Avalanche mechanism; gate to drain capacitance; high power terahertz application; InN; ionization coefficient; tunnel field effect transistor (TFET); Wolff's theory.

Indexed keywords

AVALANCHE MECHANISM; GATE-TO-DRAIN CAPACITANCE; INN; IONIZATION COEFFICIENT; TERAHERTZ APPLICATIONS; TUNNEL FIELD-EFFECT TRANSISTORS (TFET); WOLFF'S THEORY;

EID: 84907470064     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2344914     Document Type: Article

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