Insitu analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires

Nanotechnology

Volumn 21, Issue 24, 2010, Pages

  Knelangen, M ^a   Consonni, V ^a   Trampert, A ^a   Riechert, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BUFFER; CATALYST-FREE; DIFFERENT PROCESS; EPITAXIAL STRAIN; EX SITU; GAN NANOWIRES; GROWTH MECHANISMS; IN-SITU; IN-SITU ANALYSIS; MISFIT DISLOCATIONS; NUCLEATION AND GROWTH; PLASTIC RELAXATION; RICH CONDITIONS; SELF-INDUCED GROWTH; SHAPE TRANSITIONS; STRAIN RELAXATION MECHANISM; THREE-DIMENSIONAL ISLANDS;

GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; SCANNING ELECTRON MICROSCOPY; STRAIN CONTROL; STRAIN RELAXATION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77952615029     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/24/245705     Document Type: Article

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