Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Shen, C H ^a   Chen, H Y ^a   Lin, H W ^a   Gwo, S ^a   Klochikhin, A A ^b   Davydov, V Yu ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRONS; INDIUM COMPOUNDS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SILICON; THERMAL EFFECTS;

ELECTRON ACCUMULATION EFFECTS; NANORODS; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; ROOM TEMPERATURE;

PHOTOLUMINESCENCE;

EID: 33745449217     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2216924     Document Type: Article

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