AlGaN/AlN/GaN high-power microwave HEMT

IEEE Electron Device Letters

Volumn 22, Issue 10, 2001, Pages 457-459

  Shen, L ^a   Heikman, S ^a   Moran, B ^a   Coffie, R ^a   Zhang, N Q ^a   Buttari, D ^a   Smorchkova, I P ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

GaN; Heterojunctions; Microwave power FETs; MODFETs

Indexed keywords

ELECTRON MOBILITY; HETEROJUNCTIONS; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

ALLOY SCATTERING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035474079     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.954910     Document Type: Article

References (10)

1. Measured power performance of AlGaN/GaN MODFET's
2. Very-high power density AlGaN/GaN HEMT's
3. 1-xN
4. Two-dimensional electron gases by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
5. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
6. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFET's
7. The effect of surface passivation on the microwave characteristics of AlGaN/GaN HFET's