Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 24, 2012, Pages

  Zhao, S ^a   Mi, Z ^a   Kibria, M G ^a   Li, Q ^b   Wang, G T ^b  

^a MCGILL UNIVERSITY   (Canada)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84863326381     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.245313     Document Type: Article

References (69)

1. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1499753 81, 1246 (2002). (Pubitemid 34963818)
2. V. Y. Davydov, A. Klochikhin, R. Seisyan, V. Emtsev, S. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. Mudryi, J. Aderhold, Phys. Stat. Sol. (b) 0370-1972 10.1002/1521-3951(200202)229:33.0. CO;2-O 229 (3), R1 (2002).
3. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1482786 80, 3967 (2002). (Pubitemid 34638109)
4. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.66. 201403 66, 201403 (2002).
5. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, S. X. Li, E. E. Haller, H. Lu, and W. J. Schaff, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1605815 94, 4457 (2003).
6. B. Arnaudov, T. Paskova, P. P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu, W. J. Schaff, H. Amano, and I. Akasaki, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.69.115216 69, 115216 (2004).
7. S. P. Fu, T. T. Chen, and Y. F. Chen, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/21/3/005 21, 244 (2006). (Pubitemid 43254092)
8. T. Stoica, R. J. Meijers, R. Calarco, T. Richter, E. Sutter, and H. Lueth, Nano Lett. NALEFD 1530-6984 10.1021/nl060547x 6, 1541 (2006). (Pubitemid 44195344)
9. M. Feneberg, J. Däubler, K. Thonke, R. Sauer, P. Schley, and R. Goldhahn, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.77.245207 77, 245207 (2008).
10. M. E. Holtz, I. Gherasoiu, V. Kuryatkov, S. A. Nikishin, A. A. Bernussi, and M. W. Holtz, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3078775 105, 063702 (2009).
11. J. Segura-Ruiz, N. Garro, A. Cantarero, C. Denker, J. Malindretos, and A. Rizzi, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.79.115305 79, 115305 (2009).
12. Y. L. Chang, F. Li, A. Fatehi, and Z. Mi, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/20/34/345203 20, 345203 (2009).
13. Y. L. Chang, Z. Mi, and F. Li, Adv. Funct. Mater. 1616-301X 10.1002/adfm.201000739 20, 4146 (2010).
14. M. César, Y. Ke, W. Ji, H. Guo, and Z. Mi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3592573 98, 202107 (2011).
15. V. Chin, T. Tansley, and T. Osotchan, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.356650 75, 7365 (1994).
16. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.585897 10, 1237 (1992).
17. A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1595135 94, 2779 (2003).
18. J. Wu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3155798 106, 011101 (2009).
19. I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.92.036804 92, 036804 (2004).
20. I. Mahboob, T. D. Veal, L. F. J. Piper, C. F. McConville, H. Lu, W. J. Schaff, J. Furthmüller, and F. Bechstedt, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.69.201307 69, 201307(R) (2004).
21. C. H. Shen, H. Y. Chen, H. W. Lin, S. Gwo, A. A. Klochikhin, and V. Y. Davydov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2216924 88, 253104 (2006). (Pubitemid 43954835)
22. E. Calleja, J. Grandal, M. A. Sánchez-García, M. Niebelschütz, V. Cimalla, and O. Ambacher, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2749871 90, 262110 (2007). (Pubitemid 47158102)
23. C. G. Van de Walle and D. Segev, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2722731 101, 081704 (2007). (Pubitemid 46691125)
24. J. Segura-Ruiz, A. Molina-Sánchez, N. Garro, A. García-Cristóbal, A. Cantarero, F. Iikawa, C. Denker, J. Malindretos, and A. Rizzi, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.82. 125319 82, 125319 (2010).
25. T. Richter, H. Luth, T. Schapers, R. Meijers, K. Jeganathan, S. Estevez Hernandez, R. Calarco, and M. Marso, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/20/40/405206 20, 405206 (2009).
26. A. Yoshikawa, X. Wang, Y. Ishitani, and A. Uedono, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.200983118 207, 1011 (2010).
27. C. G. Van de Walle, J. Lyons, and A. Janotti, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.200983122 207, 1024 (2010).
28. T. Stoica and R. Calarco, IEEE J. Sel. Top. Quantum Electron. IJSQEN 1077-260X 10.1109/JSTQE.2010.2092416 17, 859 (2011).
29. W. M. Linhart, T. D. Veal, P. D. C. King, G. Koblmüller, C. S. Gallinat, J. S. Speck, and C. F. McConville, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3488821 97, 112103 (2010).
30. A. Eisenhardt, M. Himmerlich, and S. Krischok, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.201100098 209, 45 (2012).
31. M. Moret, S. Ruffenach, O. Briot, and B. Gil, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3187914 95, 031910 (2009).
32. J. Grandal, M. A. Sánchez-García, E. Calleja, E. Gallardo, J. M. Calleja, E. Luna, A. Trampert, and A. Jahn, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3151824 94, 221908 (2009).
33. M. A. Sánchez-García, J. Grandal, E. Calleja, S. Lazic, J. M. Calleja, and A. Trampert, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200565311 243, 1490 (2006). (Pubitemid 44013950)
34. F. Werner, F. Limbach, M. Carsten, C. Denker, J. Malindretos, and A. Rizzi, Nano Lett. NALEFD 1530-6984 10.1021/nl8036799 9, 1567 (2009).
35. S. P. Fu, C. J. Yu, T. T. Chen, G. M. Hsu, M. J. Chen, L. C. Chen, K. H. Chen, and Y. F. Chen, Adv. Mater. ADVMEW 0935-9648 10.1002/adma.200701246 19, 4524 (2007).
36. M. Johnson, C. Lee, E. Bourret-Courchesne, S. Konsek, S. Aloni, W. Han, and A. Zettl, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1831563 85, 5670 (2004). (Pubitemid 40162558)
37. C.-T. Kuo, S.-C. Lin, K.-K. Chang, H.-W. Shiu, L.-Y. Chang, C.-H. Chen, S.-J. Tang, and S. Gwo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3549874 98, 052101 (2011).
38. C. Wu, H. Lee, C. Kuo, C. Chen, and S. Gwo, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.101.106803 101, 106803 (2008).
39. P. Ebert, S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dähne, Y. L. Hong, S. Gwo, and H. Eisele, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3553022 98, 062103 (2011).
40. G. D. Mahan, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.153.882 153, 882 (1967).
41. S. P. Fu, Y. F. Chen, and K. Tan, Solid State Commun. SSCOA4 0038-1098 10.1016/j.ssc.2005.11.013 137, 203 (2006). (Pubitemid 43052836)
42. A. Mohanta, D. J. Jang, G. T. Lin, Y. T. Lin, and L. W. Tu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3607271 110, 023703 (2011).
43. A. A. Klochikhin, V. Y. Davydov, V. V. Emtsev, A. V. Sakharov, V. A. Kapitonov, B. A. Andreev, H. Lu, and W. J. Schaff, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.71.195207 71, 195207 (2005). (Pubitemid 43285233)
44. C. Rauch, F. Reurings, F. Tuomisto, T. D. Veal, C. F. McConville, H. Lu, W. J. Schaff, C. S. Gallinat, G. Koblmüller, J. S. Speck, W. Egger, B. Löwe, L. Ravelli, and S. Sojak, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.200983120 207, 1083 (2010).
45. T. Gotschke, E. Schäfer-Nolte, R. Caterino, F. Limbach, T. Stoica, E. Sutter, K. Jeganathan, and R. Calarco, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/22/12/125704 22, 125704 (2011).
46. S. Zhao, S. Fathololoumi, K. H. Bevan, D. Liu, M. G. Kibria, Q. Li, G. T. Wang, H. Guo, and Z. Mi, Nano Lett., in press, doi: 10.1021/nl300476d.
47. C. Liang, L. Chen, J. Hwang, K. Chen, Y. Hung, and Y. Chen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1490636 81, 22 (2002). (Pubitemid 34783689)
48. J. Zhang, L. Zhang, X. Peng, and X. Wang, J. Mater. Chem. JMACEP 0959-9428 10.1039/b111270h 12, 802 (2002).
49. J. Grandal, M. A. Sánchez-García, E. Calleja, E. Luna, and A. Trampert, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2756293 91, 021902 (2007). (Pubitemid 47114713)
50. J. Grandal and M. Sanchezgarcia, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2005.01.035 278, 373 (2005). (Pubitemid 40643377)
51. E. Calleja, J. Ristić, S. Fernández-Garrido, L. Cerutti, M. A. Sánchez-García, J. Grandal, A. Trampert, U. Jahn, G. Sánchez, A. Griol, and B. Sánchez, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200675628 244, 2816 (2007).
52. C. Hsiao, H. Hsu, L. Chen, C. Wu, C. Chen, M. Chen, L. Tu, and K. Chen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2804568 91, 181912 (2007). (Pubitemid 350037194)
53. T. B. Hoang, A. F. Moses, H. L. Zhou, D. L. Dheeraj, B. O. Fimland, and H. Weman, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3104853 94, 133105 (2009).
54. L. V. Titova, T. B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Y. Kim, H. J. Joyce, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2364885 89, 173126 (2006). (Pubitemid 44656728)
55. A. Mishra, L. V. Titova, T. B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2828034 91, 263104 (2007).
56. A. Chiari, M. Colocci, F. Fermi, Y. Li, R. Querzoli, A. Vinattieri, and W. Zhuang, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.2221470148 147, 421 (1988).
57. S. Breuer, C. Pfuller, T. Flissikowski, O. Brandt, H. T. Grahn, L. Geelhaar, and H. Riechert, Nano Lett. NALEFD 1530-6984 10.1021/nl104316t 11, 1276 (2011).
58. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.79.3958 79, 3958 (1997).
59. S. P. Fu and Y. Chen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1787615 85, 1523 (2004).
60. T. Schmidt, K. Lischka, and W. Zulehner, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.45.8989 45, 8989 (1992).
61. However, the PL peak energy maintains more or less the same value, ∼ 0.674 eV. For details, see Ref. 46.
62. - 3. For a Si cell temperature difference of ∼ 100C, in general, the Si-doping concentration will vary by another factor of ∼ 10.
63. As discussed in Sec., due to the enhanced n -type characteristics, similar approaches (as those for undoped InN nanowires) did not find evidence of excitons.
64. P. Xie, Y. Hu, Y. Fang, J. Huang, and C. Lieber, Proc. Natl. Acad. Sci. PNASA6 0027-8424 10.1073/pnas.0906943106 106, 15254 (2009).
65. D. Perea, E. Hemesath, E. Schwalbach, J. Lensch-Falk, P. Voorhees, and L. Lauhon, Nat. Nanotechnol. 1748-3387 10.1038/nnano.2009.51 4, 315 (2009).
66. F is pinned to the conduction band in the near-surface region.
67. F at the near-surface region will be pinned to a higher energy.
68. See Ref. 46; the flat band situation cannot explain the presence of high electron density in the near-surface region and low electron density in the bulk region.
69. The low-energy peak E PL L is not observable at low temperatures. This is because (1) E PL L shifts to higher energy at low temperatures and it merges with E PL H [see Fig.], and (2) the intensity of E PL H increases much faster than that of E PL L with decreasing temperature such that E PL H overshadows E PL L at low temperatures [see Fig.]. The reason for this can be ascribed to the evolution of the emission region to the near-surface as discussed in the main text, as well as the reduced nonradiative recombination rate in the near-surface region at low temperatures.