Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 95-99

  Chai, Jessica H ^a,b,d   Song, Young Wook ^a,b   Reeves, Roger J ^a,b   Durbin, Steven M ^b,c  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

^c State University of New York   (United States)

^d Texas State University   (United States)

Author keywords

Hall effect; InN; Mn; p type; photoluminescence; plasma assisted molecular beam epitaxy

Indexed keywords

BAND-GAP SEMICONDUCTORS; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; ELECTRON ACCUMULATION; EX SITU; IN-SITU; IN-SITU DOPING; INDIUM NITRIDE; INN; LOW ENERGIES; MATERIAL QUALITY; MN-DOPED; P-TYPE; PHOTOLUMINESCENCE MEASUREMENTS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM NITRIDE; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMAS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; SURFACE ACTIVE AGENTS;

MANGANESE;

EID: 84055222591     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100153     Document Type: Article

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