Nanowire transistors without junctions

Nature Nanotechnology

Volumn 5, Issue 3, 2010, Pages 225-229

  Colinge, Jean Pierre ^a   Lee, Chi Woo ^a   Afzalian, Aryan ^a,b   Akhavan, Nima Dehdashti ^a   Yan, Ran ^a   Ferain, Isabelle ^a   Razavi, Pedram ^a   O'Neill, Brendan ^a   Blake, Alan ^a   White, Mary ^a   Kelleher, Anne Marie ^a   McCarthy, Brendan ^a   Murphy, Richard ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; NANOWIRES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSISTORS;

DOPANT ATOMS; DOPING CONCENTRATION; GATE VOLTAGES; LOW-LEAKAGE CURRENT; NANOWIRE TRANSISTORS; SEMICONDUCTOR INDUSTRY; SILICON NANOWIRES; SUBTHRESHOLD SLOPE;

SEMICONDUCTOR JUNCTIONS;

NANOWIRE; SILICON;

ARTICLE; COMPLEMENTARY METAL OXIDE SEMDICONDUCTOR; CONCENTRATION (PARAMETERS); CONTROLLED STUDY; DEGRADATION; ELECTRIC CURRENT; ELECTRIC POTENTIAL; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE;

EID: 77949275137     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2010.15     Document Type: Article

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