Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8625, Issue , 2013, Pages

  Yamaguchi, T ^a   Wang, K ^b   Araki, T ^b   Honda, T ^a   Yoon, E ^b   Nanishi, Y ^b,c  

^a KOGAKUIN UNIVERSITY   (Japan)

^b RITSUMEIKAN UNIVERSITY   (Japan)

^c Seoul National University   (South Korea)

Author keywords

InGaN; InGaN InGaN MQW; InN InGaN MQW; RF MBE; Thick InGaN film

Indexed keywords

ELIMINATION PROCESS; EPITAXIALLY GROWN; GROWTH PROCESS; INGAN; INGAN/INGAN MQW; INN/INGAN MQW; NITROGEN RADICAL; RF-MBE;

DROPS; GALLIUM NITRIDE; IRRADIATION;

FILM GROWTH;

EID: 84878688795     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2007258     Document Type: Conference Paper

References (22)

1. T. Inushima, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, T. Sakon, M. Motokawa, and S. Ohoya, J. Cryst. Growth 227/228, 481 (2001).
2. V. Y. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, phys. stat. sol. (b) 229, R1 (2002).
3. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Arger III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
4. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
5. A. Kasic, M. Schubert, Y. Saito, Y. Nanishi, and G. Wagner: Phys. Rev. B 65, 115206 (2002).
6. V. M. Polyakov and F. Schwierz, Appl. Phys. Lett. 88, 032101 (2006).
7. S. K. O'Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman: Appl. Phys. Lett. 87, 222103 (2005).
8. A. Yoshikawa, S. B. Che, W. Yamaguchi, H. Saito, X. Q. Wang, Y. Ishitani, and E. S. Hwang, Appl. Phys. Lett. 90, 073101 (2007).
9. H.-S. Kwack, B.-J. Kwon, J.-S. Chung, Y.-H. Cho, S.-Y. Kwon, H. J. Kim, and E. Yoon, Appl. Phys. Lett. 93, 161905 (2008).
10. E. Dimakis, A. Yu. Nikiforov, C. Thomidis, L. Zhou, D. J. Smith, J. Abell, C.-K. Kao, and T. D. Moustakas, phys. stat. sol. (a) 205, 1070 (2008).
11. S. B. Che, A. Yuki, H. Watanabe, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Express 2, 021001 (2009).
12. G.-G. Wu, W.-C. Li, C.-S. Shen, F.-B. Gao, H.-W. Liang, H. Wang, L.-J. Song, and G.-T. Du, Appl. Phys. Lett. 100, 103504 (2012).
13. Y.-S. Lin, S.-H. Koa, C.-Y. Chan, S. S. H. Hsu, H.-M. Lee, and S. Gwo, Appl. Phys. Lett. 90, 142111 (2007).
14. S. Dasgupta, Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. Mishra, Appl. Phys. Lett. 96, 143504 (2010).
15. S. V. Ivanov, T. V. Shubina, V. N. Jmerik, V. A. Vekshin, P. S. Kop'ev, and B. Monemar, J. Cryst. Growth 269, 1 (2004).
16. X. Wang, S.-B. Che, Y. Ishitani, and A. Yoshikawa, Jpn. J. Appl. Phys. 45, L730 (2006).
17. C. S. Gallinat, G. Koblmüller, J. S. Brown, S. Bernardis, J. S. Speck, G. D. Chern, E. D. Readinger, H. Shen, and M. Wraback, Appl. Phys. Lett. 89, 032109 (2006).
18. Y. Nanishi, Y. Saito, and T. Yamaguchi, Jpn. J. Appl. Phys. 42, 2549 (2003).
19. T. Yamaguchi, and Y. Nanishi, Appl. Phys. Express 2, 051001 (2009).
20. K. Wang, T. Yamaguchi, T. Araki, E. Yoon and Y. Nanishi, Jpn. J. Appl. Phys. 50, 01AE02 (2011).
21. T. Yamaguchi, and Y. Nanishi, phys. stat. sol. (a) 207, 18 (2010).
22. T. Böttcher, S. Einfeldt, V. Kirchner, S. Figge, H. Heinke, D. Hommel, H. Selke and P. L. Ryder, Appl. Phys. Lett. 73, 3232 (1998).