Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 798-801

  Liao, Yitao ^a   Kao, Chen Kai ^a   Thomidis, C ^a   Moldawer, A ^a   Woodward, J ^a   Bhattarai, D ^a   Moustakas, T D ^a  

^a Photonics Center   (United States)

Author keywords

And potential fluctuations; Internal quantum efficiency; Molecular beam epitaxy; Ultraviolet light emitting diodes

Indexed keywords

ACTIVE REGIONS; ALGAN; DC INJECTION; DEEP ULTRAVIOLET; EXTERNAL QUANTUM EFFICIENCY; GA-RICH CONDITIONS; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCY; OPTICAL OUTPUT POWER; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; POTENTIAL FLUCTUATIONS; RECENT PROGRESS; ULTRAVIOLET LIGHT EMITTING DIODES; UV LEDS; WAVELENGTH RANGES;

DC POWER TRANSMISSION; EPITAXIAL GROWTH; GALLIUM; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY;

MOLECULAR BEAM EPITAXY;

EID: 84858854757     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100438     Document Type: Article

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