Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Holtz, M E ^a   Gherasoiu, I ^b   Kuryatkov, V ^a   Nikishin, S A ^a   Bernussi, A A ^a   Holtz, M W ^a  

^a TEXAS TECH UNIVERSITY   (United States)

^b RoseStreet Labs Energy   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON PHONONS; FREE-CARRIER CONCENTRATIONS; LINEWIDTH BROADENING; LOW TEMPERATURES; PHONON ENERGIES; PHOTOLUMINESCENCE SPECTRUM; PL BANDS; SHIFT ANDS; TEMPERATURE DEPENDENCES; TEMPERATURE SHIFTS;

BIOACTIVITY; ELECTRON-PHONON INTERACTIONS; PHOTOLUMINESCENCE; TEMPERATURE DISTRIBUTION;

CARRIER CONCENTRATION;

EID: 63749123485     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3078775     Document Type: Article

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