Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Ke, W C ^a   Fu, C P ^a   Chen, C Y ^a   Lee, L ^a   Ku, C S ^a   Chou, W C ^a   Chang, W H ^a   Lee, M C ^a   Chen, W K ^a   Lin, W J ^b   Cheng, Y C ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; QUENCHING; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

EMISSION PEAK ENERGIES; EMISSION PROPERTIES; INN DOT STRUCTURES; INN DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646713180     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2203510     Document Type: Article

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