Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7939, Issue , 2011, Pages

  Yamaguchi, Tomohiro ^a   Araki, Tsutomu ^a   Nanishi, Yasushi ^a,b  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b Seoul National University   (South Korea)

Author keywords

InN; insitu monitoring; MBE; New growth method; periodic InN InGaN structure

Indexed keywords

INN; INSITU MONITORING; MBE; NEW GROWTH METHOD; PERIODIC INN/INGAN STRUCTURE;

DROPS; GALLIUM NITRIDE; IRRADIATION; PERIODIC STRUCTURES;

FILM GROWTH;

EID: 79955777837     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.874840     Document Type: Conference Paper

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