Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates

IEEE Photonics Technology Letters

Volumn 26, Issue 4, 2014, Pages 342-345

  Martens, Martin ^a   Mehnke, Frank ^a   Kuhn, Christian ^a   Reich, Chirstoph ^a   Kueller, Viola ^b   Knauer, Arne ^b   Netzel, Carsten ^b   Hartmann, Carsten ^c   Wollweber, Juergen ^c   Rass, Jens ^a   Wernicke, Tim ^a   Bickermann, Matthias ^c   Weyers, Markus ^a   Kneissl, Michael ^a,b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

AlGaN; AlN substrates; epitaxial lateral overgrowth; lasers; polarization; sapphire substrates; ultraviolet

Indexed keywords

ALGAN; ALN SUBSTRATES; EPITAXIAL LATERAL OVERGROWTH; SAPPHIRE SUBSTRATES; ULTRAVIOLET;

EPITAXIAL GROWTH; LASERS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PUMPING; OPTICALLY PUMPED LASERS; POLARIZATION; RESISTORS; SAPPHIRE;

DEFECT DENSITY;

EID: 84893710908     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2013.2293611     Document Type: Article

References (19)

1. W. W. Chow and M. Kneissl, Laser gain properties of AlGaN quantum wells, J. Appl. Phys., vol. 98, no. 11, pp. 114502-1-114502-6, 2005.
2. T. Wunderer, et al., Optically pumped UV lasers grown on bulk AlN substrates, Phys. Status Solidi (c), vol. 9, nos. 3-4, pp. 822-825, 2012.
3. Z. Lochner, et al., Deep-ultraviolet lasing at 243 nm from photopumped AlGaN/AlN heterostructure on AlN substrate, Appl. Phys. Lett., vol. 102, no. 10, pp. 101110-1-101110-6, 2013.
4. J. Xie, et al., Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures, Appl. Phys. Lett., vol. 102, no. 17, pp. 171102-1-171102-4, 2013.
5. K. Ban, et al., Internal quantum efficiency of whole-compositionrange AlGaN multiquantum wells, Appl. Phys. Exp., vol. 4, no. 5, pp. 052101-1-052101-3, 2011.
6. N. M. Johnson, et al., Mid-UV AlGaN lasers on bulk AlN substrates, in Proc. Int. Workshop Nitrides, 2012, pp. 2-4.
7. H. Kawanishi, M. Senuma, M. Yamamoto, E. Niikura, and T. Nukui, Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region, Appl. Phys. Lett., vol. 89, no. 8, pp. 081121-1-081121-3, 2006.
8. T. Takano, Y. Narita, A. Horiuchi, and H. Kawanishi, Roomtemperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiplequantum- well laser, Appl. Phys. Lett., vol. 84, no. 18, pp. 3567-3569, 2004.
9. T. Wunderer, et al., Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates, Appl. Phys. Exp., vol. 4, no. 9, pp. 092101-1-092101-3, 2011.
10. V. Kueller, et al., Growth of AlGaN and AlN on patterned AlN/sapphire templates, J. Cryst. Growth, vol. 315, no. 1, pp. 200-203, 2011.
11. V. Kueller, et al., Modulated epitaxial lateral overgrowth of AlN for efficient UV LEDs, IEEE Photon. Technol. Lett., vol. 24, no. 18, pp. 1603-1605, Sep. 15, 2012.
12. U. Zeimer, V. Kueller, A. Knauer, A. Mogilatenko, M. Weyers, and M. Kneissl, High quality AlGaN grown on ELO AlN/sapphire templates, J. Cryst. Growth, vol. 377, pp. 32-36, Jan. 2013.
13. C. Hartmann, et al., Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals, Jpn. J. Appl. Phys., vol. 52, no. 8, pp. 08JA06-1-08JA06-3, 2013.
14. V. N. Jmerik, E. V. Lutsenko, and S. V. Ivanov, Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers, Phys. Status Solidi (a), vol. 210, no. 3, pp. 439-450, 2013.
15. D. Hofstetter and R. L. Thornton, Measurement of optical cavity properties in semiconductor lasers by Fourier analysis of the emission spectrum, IEEE J. Quantum Electron., vol. 34, no. 10, pp. 1914-1923, Oct. 1998. (Pubitemid 128585882)
16. T. Kolbe, et al., Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes, Appl. Phys. Lett., vol. 97, no. 17, pp. 171105-1-171105-3, 2010.
17. T. Kolbe, et al., Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes, Appl. Phys. Lett., vol. 99, no. 26, pp. 261105-1-261105-3, 2011.
18. J. E. Northrup, et al., Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells, Appl. Phys. Lett., vol. 100, no. 2, pp. 021101-1-021101-3, 2012.
19. E. F. Pecora, W. Zhang, J. Yin, R. Paiella, L. D. Negro, and T. D. Moustakas, Polarization properties of deep-ultraviolet optical gain in Al-Rich AlGaN structures, Appl. Phys. Express, vol. 5, no. 3, pp. 032103-1-032103-3, 2012.