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Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 5, 2008, Pages 1070-1073

Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

(8) Dimakis, E a Nikiforov, A Yu a Thomidis, C a Zhou, L b Smith, D J b Abell, J a Kao, C K a Moustakas, T D a

a Boston University (United States)

b ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BARE DIES; ELECTROLUMINESCENCE EMISSIONS; INJECTION CURRENTS; INN LAYERS; LED STRUCTURES; MOLECULAR-BEAM EPITAXIES; MULTIPLE QUANTUM WELLS; OPTICAL POWERS; PEAK EMISSION WAVELENGTHS; QUANTUM CONFINED STARK EFFECTS; QUANTUM WELLS; ULTRAVIOLET LIGHT EMITTING DIODES; UNIFORM THICKNESSES; UV LIGHT EMITTING DIODES;

CRYSTAL GROWTH; ELECTROMAGNETIC WAVES; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; INJECTION (OIL WELLS); LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL COMMUNICATION; PLASMA DIAGNOSTICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; ULTRAVIOLET RADIATION; WELLS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 54849418748 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200778742 Document Type: Article

Times cited : (72)

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