Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

Journal of Applied Physics

Volumn 113, Issue 1, 2013, Pages

  Schoche S ^a   Hofmann, T ^a   Darakchieva, V ^b   Ben Sedrine, N ^b,c   Wang, X ^d   Yoshikawa, A ^e,f   Schubert, M ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b LINKÖPING UNIVERSITY   (Sweden)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^d PEKING UNIVERSITY   (China)

^e CHIBA UNIVERSITY   (Japan)

^f KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INDUCED; DIP STRUCTURES; FAR-INFRARED; GAN TEMPLATE; HALL EFFECT MEASUREMENT; INFRARED ELLIPSOMETRY; INFRARED SPECTRAL; INFRARED SPECTRAL REGIONS; INN FILMS; INN LAYERS; INTER-BAND TRANSITION; LAYER THICKNESS; LO-PHONON-PLASMON; MG CONCENTRATIONS; MG-DOPING; MOBILITY PARAMETERS; MODEL PARAMETERS; P-POLARIZED; P-TYPE; P-TYPE CONDUCTIVITY; P-TYPE DOPING; PARAMETERIZED MODEL; PHONON-PLASMON COUPLING; SUDDEN CHANGE; VACUUM ULTRAVIOLET SPECTROSCOPIC ELLIPSOMETRY; VACUUM ULTRAVIOLETS;

GALLIUM NITRIDE; PHONONS; PLASMONS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ELLIPSOMETRY; SURFACE ROUGHNESS; ULTRAVIOLET SPECTROSCOPY; VACUUM;

CHARGE CARRIERS;

EID: 84872076392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772625     Document Type: Article

References (45)

1. R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 96, 125505 (2006). 10.1103/PhysRevLett.96.125505
2. X. Wang, S. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. 90, 201913 (2007). 10.1063/1.2741124
3. X. Wang, S. Che, Y. Ishitani, A. Yoshikawa, H. Sasaki, T. Shinagawa, and S. Yoshida, Appl. Phys. Lett. 91, 081912 (2007). 10.1063/1.2773762
4. X. Wang, S. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. 91, 242111 (2007). 10.1063/1.2824816
5. X. Wang, S. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. 92, 132108 (2008). 10.1063/1.2906374
6. X. Wang, G. Zhao, Q. Zhang, Y. Ishitani, A. Yoshikawa, and B. Shen, Appl. Phys. Lett. 96, 061907 (2010). 10.1063/1.3303983
7. A. Yoshikawa, X. Wang, Y. Ishitani, and A. Uedono, Phys. Status Solidi A 207, 1011 (2010). 10.1002/pssa.200983118
8. C. S. Gallinat, G. Koblmüller, and J. S. Speck, Appl. Phys. Lett. 95, 022103 (2009). 10.1063/1.3173202
9. V. Darakchieva, K. Lorenz, N. P. Barradas, E. Alves, B. Monemar, M. Schubert, N. Franco, C. L. Hsiao, W. J. Schaff, L. W. Tu, T. Yamaguchi, and Y. Nanishi, Appl. Phys. Lett. 96, 081907 (2010). 10.1063/1.3327333
10. K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. Yu, E. E. Haller, W. Walukiewicz, Appl. Phys. Lett. 98, 042104 (2011). 10.1063/1.3543625
11. M. Fujiwara, Y. Ishitani, X. Wang, S. Che, and A. Yoshikawa, Appl. Phys. Lett. 93, 231903 (2008). 10.1063/1.3006052
12. X. Wang, S. Liu, N. Ma, L. Feng, G. Chen, F. Xu, N. Tang, S. Huang, K. J. Chen, S. Zhou, and B. Shen, Appl. Phys. Express 5, 015502 (2012). 10.1143/APEX.5.015502
13. W. Keenan, C. Schneider, and C. Pillius, Solid State Technol. 14, 51 (1971).
14. P. A. Anderson, C. H. Swartz, D. Carder, R. J. Reeves, S. M. Durbin, S. Chandril, and T. H. Myers, Appl. Phys. Lett. 89, 184104 (2006). 10.1063/1.2378489
15. O. Bierwagen, S. Choi, and J. Speck, Phys. Rev. B 85, 165205 (2012). 10.1103/PhysRevB.85.165205
16. D. Aspnes, JOSA 70, 1275 (1980). 10.1364/JOSA.70.001275
17. A. Kasic, E. Valcheva, B. Monemar, H. Lu, and W. J. Schaff, Phys. Rev. B 70, 115217 (2004). 10.1103/PhysRevB.70.115217
18. V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, B. Monemar, P. Persson, F. Giuliani, E. Alves, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 94, 022109 (2009). 10.1063/1.3065030
19. V. Darakchieva, M. Schubert, T. Hofmann, B. Monemar, C.-L. Hsiao, T.-W. Liu, L.-C. Chen, W. J. Schaff, Y. Takagi, and Y. Nanishi, Appl. Phys. Lett. 95, 202103 (2009). 10.1063/1.3261731
20. Y. Ishitani, X. Wang, S. Che, and A. Yoshikawa, J. Appl. Phys. 103, 053515 (2008). 10.1063/1.2875918
21. M. Fujiwara, Y. Ishitani, X. Wang, K. Kusakabe, and A. Yoshikawa, J. Appl. Phys. 110, 093505 (2011). 10.1063/1.3656990
22. Y. Ishitani, M. Fujiwara, X. Wang, S. Che, and A. Yoshikawa, Phys. Status Solidi C 6, S397 (2009). 10.1002/pssc.200880949
23. M. Schubert, in Handbook of Ellipsometry, edited by, E. A. Irene, and, H. G. Tompkins, (William Andrew, 2004).
24. T. Hofmann, C. Herzinger, and M. Schubert, Phys. Status Solidi A 205, 779 (2008). 10.1002/pssa.200777904
25. M. Schubert, Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons and Polaritons, Springer Tracts in Modern Physics Vol. 209 (Springer, Berlin, 2004).
26. C. M. Herzinger, B. Johs, W. A. McGahan, J. A. Woollam, and W. Paulson, J. Appl. Phys. 83, 3323 (1998). 10.1063/1.367101
27. H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications (John Wiley Sons Ltd., 2007).
28. ®.
29. R. Goldhahn, A. Winzer, V. Cimalla, O. Ambacher, C. Cobet, W. Richter, N. Esser, J. Furthmüller, F. Bechstedt, H. Lu, Superlattices Microstruct. 36, 591 (2004). 10.1016/j.spmi.2004.09.016
30. J. A. Woollam Co., Inc., Guide to Using WVASE32.
31. B. Johs, C. M. Herzinger, J. H. Dinan, A. Cornfeld, and J. D. Benson, Thin Solid Films 313, 137 (1998). 10.1016/S0040-6090(97)00800-6
32. C. Herzinger and B. Johs, " Dielectric function parametric model, and method of use.," U.S. patent 5,796,983 (18 August 1998).
33. P. Lautenschlager, M. Garriga, L. Vina, and M. Cardona, Phys. Rev. B 36, 4821 (1987). 10.1103/PhysRevB.36.4821
34. J. Pankove, Optical Processes in Semiconductors (Dover, 1971).
35. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff Phys. Rev. B 66, 201403 (2002). 10.1103/PhysRevB.66.201403
36. M. Schubert, T. E. Tiwald, and C. M. Herzinger, Phys. Rev. B 61, 8187 (2000). 10.1103/PhysRevB.61.8187
37. A. A. Kukharskii, Solid State Commun. 13, 1761 (1973). 10.1016/0038-1098(73)90724-2
38. A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald, Phys. Rev. B 62, 7365 (2000). 10.1103/PhysRevB.62.7365
39. M. Schubert, T. Hofmann, and C. M. Herzinger, J. Opt. Soc. Am. A 20, 347 (2003). 10.1364/JOSAA.20.000347
40. T. Hofmann, C. M. Herzinger, J. L. Tedesco, D. K. Gaskill, J. A. Woollam, and M. Schubert, Thin Solid Films 519, 2593 (2011). 10.1016/j.tsf.2010.11.069
41. R. Goldhahn, P. Schley, A. T. Winzer, M. Rakel, C. Cobet, N. Esser, H. Lu, and W. J. Schaff, J. Cryst. Growth 288, 273 (2006). 10.1016/j.jcrysgro.2005. 12.007
42. V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Schubert, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 84, 3636 (2004). 10.1063/1.1738520
43. T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. J. Schaff, and M. Schubert, J. Electron. Mater. 37, 611 (2008). 10.1007/s11664-008-0385-8
44. T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert, Appl. Phys. Lett. 98, 041906 (2011). 10.1063/1.3548543
45. W. Walukiewicz, J. W. Ager, K. M. Yu, Z. Liliental-Weber, J. Wu, S. X. Li, R. E. Jones, and J. D. Denlinger, J. Phys. D: Appl. Phys. 39, R83 (2006). 10.1088/0022-3727/39/5/R01