Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires

Small

Volumn 4, Issue 6, 2008, Pages 751-754

  Stoica, Toma ^a   Sutter, Eli ^b   Meijers, Ralph J ^a   Debnath, Ratan K ^a   Calarco, Raffaella ^a   Lüth, Hans ^a   Grützmacher, Detlev ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

Molecular beam epitaxy; Nanostructures; Nanowires nitrides; Nucleation

Indexed keywords

CATALYSIS; ELECTRIC WIRE; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NITRIDES; NONMETALS; NUCLEATION; PLASMA DIAGNOSTICS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SILICON; SILICON NITRIDE; SUBSTRATES; WETTING;

CATALYST-FREE; GAN CLUSTERS; GROWTH OF GAN; HIGH CRYSTALLINE QUALITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HR-TEM); INITIAL STAGES; INTERFACE LAYERS; NITRIDE LAYERS; NUCLEATION AND GROWTH; OXIDIZED SILICON SUBSTRATES; PLASMA ASSISTED MBE (PAMBE); RANDOM NUCLEATION; SI (111); SI(1 0 0 ); SI(2 1 1) SUBSTRATES; SMALL CLUSTERS; WETTING LAYER (WL);

GALLIUM ALLOYS;

GALLIUM; GALLIUM NITRIDE;

ARTICLE; CATALYSIS; CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

CATALYSIS; GALLIUM; MICROSCOPY, ELECTRON, TRANSMISSION;

EID: 47549088689     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200700936     Document Type: Article

References (15)

1. C. M. Lieber, Z. L. Wang, MRS Bull. 2007, 32, 99.
2. Y. Huang, X. Duan, C. M. Lieber, Small 2005, 2, 142.
3. G. M. Jones, B. H. Hu, C. H. Yang, M. J. Yang, Y. B. Lyanda-Geller, Physica E 2006, 34, 612.
4. E. D. Minot, F. Kelkensberg, M. van Kouwen, J. A. van Dam, L. P. Kouwenhoven, V. Zwiller, M. T. Borgström, O. Wunnicke, M. A. Verheijen, E. P. A. M. Bakkers, Nano Lett. 2007, 7, 367.
5. E. Calleja, M. A. Sanchez-Garcia, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, U. Jahn, K. Ploog, Phys. Rev.B 2000, 62, 16826.
6. R. Meijers, T. Richter, R. Calarco, T. Stoica, H.-P. Bochem, M. Marso, H. Lüth, J. Cryst. Growth 2006, 289, 381.
7. S. Biswas, S. Kar, T. Ghoshal, V. D. Ashok, S. Chakrabarti, S. Chaudhuri, Mater. Res. Bull. 2007, 42, 428.
8. H.-Y. Chen, H.-W. Lin, C.-H. Shen, S. Gwo, App. Phys. Lett. 2006, 89, 243105.
9. K. A. Bertness, A. Roshko, L. M. Mansfield, T. E. Harvey, N. A. Sanford, J. Cryst. Growth 2007, 300, 94.
10. J. F. Fälth, S. K. Davidsson, X. Y. Liu, T. G. Andersson, Thin Solid Films 2006, 515, 603.
11. L. Cerutti, J. Ristić, S. Fernández-Garrido, E. Calleja, A. Trampert, K. H. Ploog, S. Lazic, J. M. Calleja, Appl. Phys. Lett. 2006, 88, 213114.
12. R. K. Debnath, R. Meijers, T. Richter, T. Stoica, R. Calarco, H. Lüth, App. Phys. Lett. 2007, 90, 123117.
13. R. Calarco, R. J. Meijers, R. K. Debnath, T. Stoica, E. Sutter, H. Lüth, Nano Lett. 2007, 7, 2248.
14. A. Trampert, J. Ristic, U. Jahn, E. Calleja, K. H. Ploog, Microsc. Semicond. Mater. Conf. Cambridge Inst. Phys. Conf. Ser. 2003, No.180, p. 167.
15. V. Mamutin, Tech. Phys. Lett. 1999, 25, 741.