InGaN solar cells: Present state of the art and important challenges

IEEE Journal of Photovoltaics

Volumn 2, Issue 3, 2012, Pages 276-293

  Bhuiyan, Ashraful Ghani ^a   Sugita, Kenichi ^a   Hashimoto, Akihiro ^a   Yamamoto, Akio ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

III nitride; InGaN solar cells; open circuit voltage; short circuit current density

Indexed keywords

ABSORPTION COEFFICIENTS; ALLOY SYSTEM; ALN; ELECTRIC ENERGIES; GRAND CHALLENGE; HIGH RADIATION RESISTANCE; III-NITRIDE; III-V SEMICONDUCTOR COMPOUNDS; MATERIAL SYSTEMS; NEW APPLICATIONS; PHOTOVOLTAIC MATERIALS; PHOTOVOLTAIC SYSTEMS; SPECTRAL REGION; STATE OF THE ART; TUNABLE BAND-GAP;

ALUMINUM NITRIDE; CONVERSION EFFICIENCY; ENERGY GAP; ENERGY RESOURCES; GALLIUM NITRIDE; GLOBAL WARMING; INDIUM; OPEN CIRCUIT VOLTAGE; SHORT CIRCUIT CURRENTS; SOLAR CELLS;

NANOSTRUCTURED MATERIALS;

EID: 84865162668     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2193384     Document Type: Article

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