High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy

Applied Physics Express

Volumn 5, Issue 1, 2012, Pages

  Wang, Xinqiang ^a   Liu, Shitao ^a   Ma, Nan ^a   Feng, Li ^a   Chen, Guang ^a   Xu, Fujun ^a   Tang, Ning ^a   Huang, Sen ^b   Chen, Kevin J ^b   Zhou, Shengqiang ^c   Shen, Bo ^a  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CONCENTRATION; HALL EFFECT MEASUREMENT; HIGH ELECTRON MOBILITY; INN LAYERS; MONTE CARLO SIMULATION; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; THEORETICAL MODELLING; THREADING DISLOCATION DENSITIES;

COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRONS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SAPPHIRE; SINGLE CRYSTALS;

HALL MOBILITY;

EID: 84862963731     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.015502     Document Type: Article

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