-
2
-
-
0023040588
-
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
-
Amano, H., Sawaki, N., Akasaki, I. & Toyoda, Y. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Appl. Phys. Lett. 48, 353-355 (1986).
-
(1986)
Appl. Phys. Lett
, vol.48
, pp. 353-355
-
-
Amano, H.1
Sawaki, N.2
Akasaki, I.3
Toyoda, Y.4
-
3
-
-
0026244249
-
GaN growth using GaN buffer layer
-
Nakamura, S. GaN growth using GaN buffer layer. Jpn J. Appl. Phys. 30, L1705-L1707 (1991).
-
(1991)
Jpn J. Appl. Phys
, vol.30
-
-
Nakamura, S.1
-
4
-
-
84883188181
-
P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)
-
Amano, H., Kito, M., Hiramatsu, K. & Akasaki, I. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn J. Appl. Phys. 28, L2112-L2114 (1989).
-
(1989)
Jpn J. Appl. Phys
, vol.28
-
-
Amano, H.1
Kito, M.2
Hiramatsu, K.3
Akasaki, I.4
-
5
-
-
0026819254
-
Thermal annealing effects on p-type Mg-doped GaN films
-
Nakamura, S., Mukai, T., Senoh, M. & Iwasa, N. Thermal annealing effects on p-type Mg-doped GaN films. Jpn J. Appl. Phys. 31, L139-L142 (1992).
-
(1992)
Jpn J. Appl. Phys
, vol.31
-
-
Nakamura, S.1
Mukai, T.2
Senoh, M.3
Iwasa, N.4
-
7
-
-
0035855050
-
Nitride light-emitting diodes
-
Mukai, T., Nagahama, S., Iwasa, N., Senoh, M. & Yamada, T. Nitride light-emitting diodes. J. Phys.: Condens. Matter 13, 7089-7098 (2001).
-
(2001)
J. Phys.: Condens. Matter
, vol.13
, pp. 7089-7098
-
-
Mukai, T.1
Nagahama, S.2
Iwasa, N.3
Senoh, M.4
Yamada, T.5
-
8
-
-
33846462461
-
Characteristics of InGaN light-emitting diodes on GaN substrates with low threading dislocation densities
-
Akita, K., Kyono, T., Yoshizumi, Y., Kitabayashi, H. & Katayama, K. Characteristics of InGaN light-emitting diodes on GaN substrates with low threading dislocation densities. Phys. Status Solidi a 204, 246-250 (2007).
-
(2007)
Phys. Status Solidi a
, vol.204
, pp. 246-250
-
-
Akita, K.1
Kyono, T.2
Yoshizumi, Y.3
Kitabayashi, H.4
Katayama, K.5
-
9
-
-
0141817114
-
High output power 365 nm ultraviolet light emitting diode of GaN-free structure
-
Morita, D. et al. High output power 365 nm ultraviolet light emitting diode of GaN-free structure. Jpn J. Appl. Phys. 41, 11434-11436 (2002).
-
(2002)
Jpn J. Appl. Phys
, vol.41
, pp. 11434-11436
-
-
Morita, D.1
-
10
-
-
33746407706
-
-
Investigation of optical-output-power degradation in 365-nm UV-LEDs, 2211.-2214
-
Mukai, T. et al. Investigation of optical-output-power degradation in 365-nm UV-LEDs. Phys. Status Solidi c 3, 2211.-2214 (2005).
-
(2005)
Phys. Status Solidi c
, vol.3
-
-
Mukai, T.1
-
11
-
-
36549100787
-
Photoluminescence characteristics of.AlGaN-GaN-AlGaN quantum wells
-
Khan, M. A., Skogman, R. A., Van Hove, G. M., Krishnankutty, S. & Kolbas, R. M. Photoluminescence characteristics of.AlGaN-GaN-AlGaN quantum wells. Appl. Phys. Lett. 56, 1257-1259 (1990).
-
(1990)
Appl. Phys. Lett
, vol.56
, pp. 1257-1259
-
-
Khan, M.A.1
Skogman, R.A.2
Van Hove, G.M.3
Krishnankutty, S.4
Kolbas, R.M.5
-
12
-
-
21544445581
-
AlGaN/GaN quantum well ultraviolet light emitting diodes
-
Han, J. et al. AlGaN/GaN quantum well ultraviolet light emitting diodes. Appl. Phys. Lett. 73, 1688-1690 (1998).
-
(1998)
Appl. Phys. Lett
, vol.73
, pp. 1688-1690
-
-
Han, J.1
-
13
-
-
0033221324
-
346 nm emission from AlGaN multi-quantum-well light emitting diode
-
Nishida, T. & Kobayashi, N. 346 nm emission from AlGaN multi-quantum-well light emitting diode. Phys. Status Solidi a 176, 45-48 (1999).
-
(1999)
Phys. Status Solidi a
, vol.176
, pp. 45-48
-
-
Nishida, T.1
Kobayashi, N.2
-
14
-
-
0033718878
-
0.90N double heterostructure light-emitting' diode on sapphire substrate
-
0.90N double heterostructure light-emitting' diode on sapphire substrate. Jpn J. Appl. Phys. 39, L445-L448 (2000).
-
(2000)
Jpn J. Appl. Phys
, vol.39
-
-
Otsuka, N.1
-
15
-
-
0001348454
-
Lattice and energy band engineering in AlInGaN/GaN heterostructures
-
Khan, M. A. et al. Lattice and energy band engineering in AlInGaN/GaN heterostructures. Appl. Phys. Lett. 76, 1161-1163 (2000).
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 1161-1163
-
-
Khan, M.A.1
-
16
-
-
0035705151
-
Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells
-
Khan, M. A. et al. Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells. Jpn J. Appl. Phys. 40, L1308-L1310 (2001).
-
(2001)
Jpn J. Appl. Phys
, vol.40
-
-
Khan, M.A.1
-
18
-
-
38749086044
-
-
1 725-727
-
Nishida, T., Saito, H., Kumakura, K., Makimoto, T. & Kobayashi, H. Proceedings of International Workshop on Nitride Semiconductors (IWN 2000), IPAP Conference Series 1 725-727 (2000).
-
(2000)
Proceedings of International Workshop on Nitride Semiconductors (IWN 2000), IPAP Conference Series
-
-
Nishida, T.1
Saito, H.2
Kumakura, K.3
Makimoto, T.4
Kobayashi, H.5
-
19
-
-
3543085183
-
Quantum-confined Stark effect and recombination dynamics of spatially indirect excitons in MBE-grown GaN-AlGaN quantum wells
-
Lefebvre, P. et al. Quantum-confined Stark effect and recombination dynamics of spatially indirect excitons in MBE-grown GaN-AlGaN quantum wells. MRS Int. J. Nitrogen Semiconductor Res. 4S1, G3.69 (1999).
-
(1999)
MRS Int. J. Nitrogen Semiconductor Res
, vol.4 S1
-
-
Lefebvre, P.1
-
20
-
-
0034710677
-
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
-
Waltereit, P. et al. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865-868 (2000).
-
(2000)
Nature
, vol.406
, pp. 865-868
-
-
Waltereit, P.1
-
21
-
-
0642275027
-
Spontaneous polarization and piezoelectric constants of III-V nitrides
-
Bernardini, F., Florentini, V. & Vanderbilt, D. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B. 56, R10024-R10027 (1997).
-
(1997)
Phys. Rev. B
, vol.56
-
-
Bernardini, F.1
Florentini, V.2
Vanderbilt, D.3
-
22
-
-
33744532001
-
The impact of electron beam damage on the detection of indium-rich localization centres in InGaN quantum wells using transmission electron microscopy
-
Smeeton, T. M., Humphreys, C. J., Barnard, J. S. & Kappers, M. J. The impact of electron beam damage on the detection of indium-rich localization centres in InGaN quantum wells using transmission electron microscopy. J. Mater. Sci. 41, 2729-2737 (2006).
-
(2006)
J. Mater. Sci
, vol.41
, pp. 2729-2737
-
-
Smeeton, T.M.1
Humphreys, C.J.2
Barnard, J.S.3
Kappers, M.J.4
-
23
-
-
0001141036
-
Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate
-
Motoki, K. et al. Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate. Jpn J. Appl. Phys. 40, L140-L143 (2001).
-
(2001)
Jpn J. Appl. Phys
, vol.40
-
-
Motoki, K.1
-
24
-
-
9944234895
-
High efficiency GaN-based LEDs and lasers on SiC
-
Edmond, J. et al. High efficiency GaN-based LEDs and lasers on SiC. J. Crystal Growth 272, 242-250 (2004).
-
(2004)
J. Crystal Growth
, vol.272
, pp. 242-250
-
-
Edmond, J.1
-
25
-
-
19944387902
-
High performance AlGaInN ultraviolet light-emitting diode at the 340 nm wavelength
-
Jeon, S. R. et al. High performance AlGaInN ultraviolet light-emitting diode at the 340 nm wavelength. Jpn J. Appl. Phys. 43, L1409-L1412 (2004).
-
(2004)
Jpn J. Appl. Phys
, vol.43
-
-
Jeon, S.R.1
-
26
-
-
1642556886
-
Development of a UV-LED-based biosensor Proc
-
Jeys, T. H., Desmarais, L., Lynch, E. J. & Ochoa, J. R. Development of a UV-LED-based biosensor Proc. SPIE 5071, 234-240 (2003).
-
(2003)
SPIE
, vol.5071
, pp. 234-240
-
-
Jeys, T.H.1
Desmarais, L.2
Lynch, E.J.3
Ochoa, J.R.4
-
27
-
-
34547880808
-
Dislocations In AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy
-
Imura, M. et al. Dislocations In AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy. Jpn J. Appl. Phys. 46, 1458-1462 (2007).
-
(2007)
Jpn J. Appl. Phys
, vol.46
, pp. 1458-1462
-
-
Imura, M.1
-
28
-
-
0034505839
-
Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio
-
Ohba, Y. & Sato, R. Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio. J. Crystal Growth. 221, 258-261 (2000).
-
(2000)
J. Crystal Growth
, vol.221
, pp. 258-261
-
-
Ohba, Y.1
Sato, R.2
-
29
-
-
0000169915
-
-
Khan, M. A., Kuzina, J. N., Olson, D. T., George, T. & Pike, W. T. GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition. Appl. Phys. Lett. 63, 3470-3472 (1993).
-
Khan, M. A., Kuzina, J. N., Olson, D. T., George, T. & Pike, W. T. GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition. Appl. Phys. Lett. 63, 3470-3472 (1993).
-
-
-
-
30
-
-
34547901766
-
Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy
-
Balakrishnan, K. et al. Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy. Jpn J. Appl. Phys. 46, L307-L310 (2007).
-
(2007)
Jpn J. Appl. Phys
, vol.46
-
-
Balakrishnan, K.1
-
31
-
-
33747825033
-
Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates
-
Chen, Z. et al. Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates. Appl. Phys. Lett. 89, 081905 (2006).
-
(2006)
Appl. Phys. Lett
, vol.89
, pp. 081905
-
-
Chen, Z.1
-
32
-
-
33751557952
-
Microstructure of epitaxial lateral overgrown. AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
-
Imura, M. et al. Microstructure of epitaxial lateral overgrown. AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy. Appl. Phys. Lett. 89, 221901 (2006).
-
(2006)
Appl. Phys. Lett
, vol.89
, pp. 221901
-
-
Imura, M.1
-
33
-
-
0034831582
-
Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
-
Kamiyama, S. et al. Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure. J. Crystal Growth 223, 83-91 (2001).
-
(2001)
J. Crystal Growth
, vol.223
, pp. 83-91
-
-
Kamiyama, S.1
-
34
-
-
0001792520
-
Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
-
Han, J. et al. Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers. Appl. Phys. Lett. 78, 67-69 (2001).
-
(2001)
Appl. Phys. Lett
, vol.78
, pp. 67-69
-
-
Han, J.1
-
35
-
-
0347874296
-
I-nitrides: Growth, characterization, and properties
-
Jain, S. C., Willander, M., Narayan, J. & Overstraeten, R. III-nitrides: growth, characterization, and properties. J. Appl. Phys. 87, 965-1006 (2000).
-
(2000)
J. Appl. Phys
, vol.87
, pp. 965-1006
-
-
Jain, S.C.1
Willander, M.2
Narayan, J.3
Overstraeten II, R.4
-
36
-
-
0346586798
-
Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
-
Bykhovski, A. D., Gelmont, B. L. & Shur, M. S. Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices. J. Appl. Phys. 81, 6332-6338 (1997).
-
(1997)
J. Appl. Phys
, vol.81
, pp. 6332-6338
-
-
Bykhovski, A.D.1
Gelmont, B.L.2
Shur, M.S.3
-
37
-
-
79956048052
-
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
-
Zhang, J. P. et al. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management. Appl. Phys. Lett. 80, 3542-3544 (2002).
-
(2002)
Appl. Phys. Lett
, vol.80
, pp. 3542-3544
-
-
Zhang, J.P.1
-
38
-
-
79955997004
-
AlN/AlGaN superlattices as dislocation filter for low-threading-dlslocation thick AlGaN layers on sapphire
-
Wang, H. M. et al. AlN/AlGaN superlattices as dislocation filter for low-threading-dlslocation thick AlGaN layers on sapphire. Appl. Phys. Lett. 81, 604-606 (2002).
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 604-606
-
-
Wang, H.M.1
-
39
-
-
0037088528
-
Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate
-
Chitnis, A. et al. Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate, Jpn J. Appl. Phys. 41, L320-L322 (2002).
-
(2002)
Jpn J. Appl. Phys
, vol.41
-
-
Chitnis, A.1
-
40
-
-
31544462343
-
III-nitride UV devices
-
Khan, M. A., Shatalov, M., Maruska, H. P., Wang, H. M. & Kuokstis, E. III-nitride UV devices. Jpn J. Appl. Phys. 44, 7191-7206 (2005).
-
(2005)
Jpn J. Appl. Phys
, vol.44
, pp. 7191-7206
-
-
Khan, M.A.1
Shatalov, M.2
Maruska, H.P.3
Wang, H.M.4
Kuokstis, E.5
-
41
-
-
0035927104
-
Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates
-
Guo, X. & Schubert, E. F. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates. Appl. Phys. Lett. 78, 3337-3339 (2001).
-
(2001)
Appl. Phys. Lett
, vol.78
, pp. 3337-3339
-
-
Guo, X.1
Schubert, E.F.2
-
42
-
-
0035886301
-
Current crowding in GaN/InGaN light emitting diodes on insulating substrates
-
Guo, X. & Schubert, E. F. Current crowding in GaN/InGaN light emitting diodes on insulating substrates. J. Appl. Phys. 90, 4191-4195 (2001).
-
(2001)
J. Appl. Phys
, vol.90
, pp. 4191-4195
-
-
Guo, X.1
Schubert, E.F.2
-
43
-
-
5044228774
-
High-power deep ultraviolet light-emitting diodes based on a micro-pixel design
-
Adivarahan, V. et al. High-power deep ultraviolet light-emitting diodes based on a micro-pixel design. Appl. Phys. Lett. 85, 1838-1840 (2004).
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 1838-1840
-
-
Adivarahan, V.1
-
44
-
-
0031260803
-
Optical properties of GaN/AlGaN multiple quantum well microdisks
-
Mair, R. A., et al. Optical properties of GaN/AlGaN multiple quantum well microdisks. Appl. Phys. Lett. 71, 2898-2900 (1997).
-
(1997)
Appl. Phys. Lett
, vol.71
, pp. 2898-2900
-
-
Mair, R.A.1
-
45
-
-
0000869693
-
GaN microdisk light emitting diodes
-
Jin, S. X., Li, J., Li, J. Z., Lin, J. Y. & Jiang, H. X. GaN microdisk light emitting diodes. Appl. Phys. Lett. 76, 631-633 (2000).
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 631-633
-
-
Jin, S.X.1
Li, J.2
Li, J.Z.3
Lin, J.Y.4
Jiang, H.X.5
-
46
-
-
20844461301
-
Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode
-
Jeon, C. W., Gu. E. Sr Dawson, M. D. Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode. Appl. Phys. Lett. 86, 221105 (2005).
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 221105
-
-
Jeon, C.W.1
Gu, E.2
Sr Dawson, M.D.3
-
47
-
-
0032622136
-
Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals
-
Boroditsky, M. et al. Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals. Appl. Phys. Lett. 75, 1036-1038 (1999).
-
(1999)
Appl. Phys. Lett
, vol.75
, pp. 1036-1038
-
-
Boroditsky, M.1
-
48
-
-
0042926609
-
III-nitride photonic crystals
-
Oder, T. N., Shakya, J., Lin, J. Y. & Jiang, H. X. III-nitride photonic crystals. Appl. Phys. Lett. 89, 1231-1233 (2003).
-
(2003)
Appl. Phys. Lett
, vol.89
, pp. 1231-1233
-
-
Oder, T.N.1
Shakya, J.2
Lin, J.Y.3
Jiang, H.X.4
-
49
-
-
1242329865
-
III-nitride blue and ultraviolet photonic: Crystal light emitting diodes
-
Oder, T. N., Kim, K. H., Lin, J. Y.& Jiang, H. X. III-nitride blue and ultraviolet photonic: crystal light emitting diodes. Appl. Phys. Lett. 84, 466-468 (2004).
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 466-468
-
-
Oder, T.N.1
Kim, K.H.2
Lin, J.Y.3
Jiang, H.X.4
-
50
-
-
79956037932
-
Self heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
-
Chitnis, A. et al. Self heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm. Appl. Phys. Lett. 81, 3491-3493 (2002).
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 3491-3493
-
-
Chitnis, A.1
-
51
-
-
0037049606
-
-
Gaska, R. et al. Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN. Appl. Phys. Lett. 81, 4658-4660 (2002).
-
Gaska, R. et al. Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN. Appl. Phys. Lett. 81, 4658-4660 (2002).
-
-
-
-
52
-
-
0036570824
-
Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk single crystals
-
Rojo, J. C. et al. Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk single crystals. J. Crystal Growth 240, 508-512 (2002).
-
(2002)
J. Crystal Growth
, vol.240
, pp. 508-512
-
-
Rojo, J.C.1
-
53
-
-
0037463256
-
-
Hu, X. et al. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN. Appl. Phys. Lett. 82, 1299-1301 (2003).
-
Hu, X. et al. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN. Appl. Phys. Lett. 82, 1299-1301 (2003).
-
-
-
-
54
-
-
1542366686
-
AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates
-
Nishida, T., Makimoto, T., Saito, H. & Ban, T. AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates. Appl. Phys. Lett. 84, 1002-1004 (2004).
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 1002-1004
-
-
Nishida, T.1
Makimoto, T.2
Saito, H.3
Ban, T.4
-
55
-
-
2542469830
-
Near-bandedge cathodoluminescence of an AlN homoepitaxial film
-
Silveira, E. et al. Near-bandedge cathodoluminescence of an AlN homoepitaxial film. Appl. Phys. Lett. 84, 3501-3503 (2004).
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 3501-3503
-
-
Silveira, E.1
-
59
-
-
33846428433
-
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
-
Imura, M. et al. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers. J. Crystal Growth 298, 257-260 (2007).
-
(2007)
J. Crystal Growth
, vol.298
, pp. 257-260
-
-
Imura, M.1
-
60
-
-
36048989927
-
Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN
-
Adivarahan, V. et al. Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN. Jpn J. Appl. Phys. 46, L877-L879 (2007).
-
(2007)
Jpn J. Appl. Phys
, vol.46
-
-
Adivarahan, V.1
-
61
-
-
34547850408
-
Robust 285 nm deep UV light emitting diodes over metal organic hydride vapor phase epitaxially grown AlN/sapphire templates
-
Adivarahan, V. et al. Robust 285 nm deep UV light emitting diodes over metal organic hydride vapor phase epitaxially grown AlN/sapphire templates. Jpn J. Appl. Phys. 46, L537-L539 (2007).
-
(2007)
Jpn J. Appl. Phys
, vol.46
-
-
Adivarahan, V.1
-
63
-
-
0037514398
-
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping
-
Nakarmi, M. L., Kim, K. H., Li, J., Lin, J. Y. & Jiang, H. X. Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping. Appl. Phys. Lett. 82, 3041-3043 (2003).
-
(2003)
Appl. Phys. Lett
, vol.82
, pp. 3041-3043
-
-
Nakarmi, M.L.1
Kim, K.H.2
Li, J.3
Lin, J.Y.4
Jiang, H.X.5
-
64
-
-
0001259716
-
Accumulation hole layer in p-GaN/AlGaN heterostructures
-
Shur, M. S. et al. Accumulation hole layer in p-GaN/AlGaN heterostructures. Appl. Phys. Lett. 76, 3061-3063 (2000).
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 3061-3063
-
-
Shur, M.S.1
-
65
-
-
79956015209
-
Threading dislocation reduction via laterally overgrown .nonpolar (1120) a-plane GaN
-
Craven, M. D., Lim, S. H., Wu, F., Speck, J. & DenBaars, S. P. Threading dislocation reduction via laterally overgrown .nonpolar (1120) a-plane GaN. Appl. Phys. Lett. 81, 1201-1203 (2002).
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 1201-1203
-
-
Craven, M.D.1
Lim, S.H.2
Wu, F.3
Speck, J.4
DenBaars, S.P.5
-
66
-
-
0141606729
-
A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire
-
Chen, C. et al. A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire. Jpn J. Appl. Phys. 42, L818-L820 (2003).
-
(2003)
Jpn J. Appl. Phys
, vol.42
-
-
Chen, C.1
-
67
-
-
6344237373
-
Optically pumped lasing at 353 nm using non-polar a-plane AlGaN multiple quantum wells over r-plane sapphire
-
Chen, C. et al. Optically pumped lasing at 353 nm using non-polar a-plane AlGaN multiple quantum wells over r-plane sapphire. Jpn J. Appl. Phys. 43, L1099-L1102 (2004).
-
(2004)
Jpn J. Appl. Phys
, vol.43
-
-
Chen, C.1
-
68
-
-
0344063346
-
Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells
-
Chen, C. et al. Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells. Jpn J. Appl. Phys. 42, L1039-L1040 (2003).
-
(2003)
Jpn J. Appl. Phys
, vol.42
-
-
Chen, C.1
-
69
-
-
0344083339
-
Planar Schottky diodes on high quality A-plane GaN
-
Adivarahan, V. et al. Planar Schottky diodes on high quality A-plane GaN. Jpn J. Appl. Phys. 42, L1136-L1138 (2003).
-
(2003)
Jpn J. Appl. Phys
, vol.42
-
-
Adivarahan, V.1
-
70
-
-
34250760712
-
High power and high external efficiency m-plane InGaN light emitting diodes
-
Schmidt, M. et al. High power and high external efficiency m-plane InGaN light emitting diodes. Jpn J. Appl. Phys. 46, L126-L128 (2007).
-
(2007)
Jpn J. Appl. Phys
, vol.46
-
-
Schmidt, M.1
-
72
-
-
34250652683
-
Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes
-
Okamoto, K. et al. Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes. Jpn J. Appl. Phys. 46, L187-L189 (2007).
-
(2007)
Jpn J. Appl. Phys
, vol.46
-
-
Okamoto, K.1
-
73
-
-
33646414900
-
Novel metalorganic chemical vapor deposition system for GaN growth
-
Nakamura, S., Harada, Y. & Seno, M. Novel metalorganic chemical vapor deposition system for GaN growth. Appl. Phys. Lett. 58, 2021-2023 (1991).
-
(1991)
Appl. Phys. Lett
, vol.58
, pp. 2021-2023
-
-
Nakamura, S.1
Harada, Y.2
Seno, M.3
-
74
-
-
0000561505
-
Growth of high-quality AlN and AlN/GaN/AlN heterostructure on sapphire substrate
-
Ohba, Y. & Hatana, A. Growth of high-quality AlN and AlN/GaN/AlN heterostructure on sapphire substrate. Jpn J. Appl. Phys. 35, L1013-L1015 (1996).
-
(1996)
Jpn J. Appl. Phys
, vol.35
-
-
Ohba, Y.1
Hatana, A.2
-
75
-
-
0035698941
-
0.6N buffer layers prepared with high-temperature-grown AlN buffer on sapphire substrates and fabrication of multiple-quantum-well structures
-
0.6N buffer layers prepared with high-temperature-grown AlN buffer on sapphire substrates and fabrication of multiple-quantum-well structures. Jpn J. Appl. Phys. 40, L1293-L1296 (2001).
-
(2001)
Jpn J. Appl. Phys
, vol.40
-
-
Ohba, Y.1
Sato, R.2
Kaneko, K.3
-
76
-
-
0039782265
-
Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
-
Nishida, T., Salto, H. & Kobayashi, N. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN. Appl. Phys. Lett. 79, 711-712 (2001).
-
(2001)
Appl. Phys. Lett
, vol.79
, pp. 711-712
-
-
Nishida, T.1
Salto, H.2
Kobayashi, N.3
-
77
-
-
0035905273
-
Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
-
Adivarahan, V. et al. Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells. Appl. Phys. Lett. 79, 4240-4242 (2001).
-
(2001)
Appl. Phys. Lett
, vol.79
, pp. 4240-4242
-
-
Adivarahan, V.1
-
78
-
-
79956022396
-
AlGaN single-quantum-well light-emitting diodes with emission at 285 nm
-
Adivarahan, V. et al. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm. Appl. Phys. Lett. 81, 3666-3668 (2002).
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 3666-3668
-
-
Adivarahan, V.1
-
79
-
-
79955992675
-
Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
-
Yasan, A. et al. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm. Appl. Phys. Lett. 81, 801-802 (2002).
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 801-802
-
-
Yasan, A.1
-
80
-
-
3042596202
-
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
-
Adivarahan, V. et al. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes. Appl. Phys. Lett. 84, 4762-4764 (2004).
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 4762-4764
-
-
Adivarahan, V.1
-
81
-
-
5144233098
-
Micro-pixel design milliwatt power 254 nm emission light emitting diodes
-
Wu, S. et al. Micro-pixel design milliwatt power 254 nm emission light emitting diodes. Jpn J. Appl. Phys. 43, L1035-L1037 (2004).
-
(2004)
Jpn J. Appl. Phys
, vol.43
-
-
Wu, S.1
-
82
-
-
7044227739
-
250 nm AlGaN light-emitting diodes
-
Adivarahan, V. et al. 250 nm AlGaN light-emitting diodes. Appl. Phys. Lett. 85, 2175-2177 (2004).
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 2175-2177
-
-
Adivarahan, V.1
-
83
-
-
33745627020
-
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
-
Taniyasu, Y., Kasu, M. & and Makimoto, T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature 441, 325-328 (2006).
-
(2006)
Nature
, vol.441
, pp. 325-328
-
-
Taniyasu, Y.1
Kasu, M.2
Makimoto, T.3
-
84
-
-
34547857438
-
Room-temperature stimulated emission from AlN at 214 nm
-
Shatalov, M., Gaevski, M., Adivarahan, V. & Khan, A. Room-temperature stimulated emission from AlN at 214 nm. Jpn J. Appl. Phys. 45, L1286-L1288 (2006).
-
(2006)
Jpn J. Appl. Phys
, vol.45
-
-
Shatalov, M.1
Gaevski, M.2
Adivarahan, V.3
Khan, A.4
-
85
-
-
27844599328
-
Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering
-
Sun, W. H. et al. Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering. Appl. Phys. Lett. 87, 211915 (2005).
-
(2005)
Appl. Phys. Lett
, vol.87
, pp. 211915
-
-
Sun, W.H.1
-
86
-
-
0037011554
-
1-xN structures for deep ultraviolet emissions below 230 nm
-
1-xN structures for deep ultraviolet emissions below 230 nm. Appl. Phys. Lett. 81, 4392-4394 (2002).
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 4392-4394
-
-
Zhang, J.P.1
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