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Volumn 110, Issue 12, 2011, Pages

Electrical and optical properties of p-type InN

(7) Mayer, Marie A a,b Choi, Soojeong c Bierwagen, Oliver c Smith III, Holland M a,b Haller, Eugene E a,b Speck, James S c Walukiewicz, Wladek a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b University of California Berkeley (United States)

c University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPREHENSIVE STUDIES; ELECTRICAL AND OPTICAL PROPERTIES; HALL COEFFICIENT; HOLE TRANSPORTS; MG-DOPED; MG-DOPING; MOBILE HOLES; P-TYPE; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; SURFACE ELECTRON ACCUMULATION; TEMPERATURE DEPENDENT; THE STANDARD MODEL;

HALL EFFECT; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

ELECTRIC PROPERTIES;

EID: 84855334251 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3670038 Document Type: Article

Times cited : (20)

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