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Volumn 5, Issue 12, 2013, Pages 5283-5287
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Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
CATALYST-FREE;
GAN NANOWIRES;
HIGH UNIFORMITY;
INGAN/GAN;
MOLECULAR BEAM EPITAXIAL GROWTH;
VERTICALLY ALIGNED;
CATALYSTS;
EPITAXIAL GROWTH;
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
OPTOELECTRONIC DEVICES;
NANOWIRES;
GALLIUM;
NANOWIRE;
SILICON DIOXIDE;
CATALYSIS;
CHEMISTRY;
ELECTRONICS;
LIGHT RELATED PHENOMENA;
SURFACE PROPERTY;
ARTICLE;
CATALYSIS;
ELECTRONICS;
GALLIUM;
NANOWIRES;
OPTICAL PHENOMENA;
SILICON DIOXIDE;
SURFACE PROPERTIES;
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EID: 84878718269
PISSN: 20403364
EISSN: 20403372
Source Type: Journal
DOI: 10.1039/c3nr00387f Document Type: Article |
Times cited : (80)
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References (37)
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