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Volumn 5, Issue 12, 2013, Pages 5283-5287

Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST-FREE; GAN NANOWIRES; HIGH UNIFORMITY; INGAN/GAN; MOLECULAR BEAM EPITAXIAL GROWTH; VERTICALLY ALIGNED;

EID: 84878718269     PISSN: 20403364     EISSN: 20403372     Source Type: Journal    
DOI: 10.1039/c3nr00387f     Document Type: Article
Times cited : (80)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.