Microstructure of relaxed InN quantum dots grown on GaN buffer layers by molecular-beam epitaxy

Applied Physics Letters

Volumn 88, Issue 23, 2006, Pages

  Zhou, Lin ^a   Xu, Tao ^b,c   Smith, David J ^a   Moustakas, T D ^b,c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b BOSTON UNIVERSITY   (United States)

^c Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTION GEOMETRIES; GAN BUFFER LAYER; INN QD/GAN INTERFACE; INN QUANTUM DOTS;

ARRAYS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745031506     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2205166     Document Type: Article

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