Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

Applied Physics Letters

Volumn 83, Issue 12, 2003, Pages 2432-2434

  Wang, Dunwei ^a   Wang, Qian ^a   Javey, Ali ^a   Tu, Ryan ^a   Dai, Hongjie ^a   Kim, Hyoungsub ^b   McIntyre, Paul C ^b   Krishnamohan, Tejas ^b   Saraswat, Krishna C ^b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; HOLE MOBILITY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICA; SINGLE CRYSTALS;

NANOWIRES;

GATES (TRANSISTOR);

EID: 0142055973     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1611644     Document Type: Article

References (20)

1. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundsfrom, and H. Dai, Nature Materials 1, 241 (2002).
2. L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, Nature (London) 420, 57 (2002).
3. P. Yang, Y. Wu, and R. Fan, Int. J. Nanosci. 1, 1 (2002).
4. Yi Cui, Deli Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003).
5. J.-Y. Yu, S.-W. Chung, and J. R. Heath, J. Phys. Chem. 104, 11864 (2000).
6. D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou, Appl. Phys. Lett. 82, 112 (2003).
7. D. Wang and H. Dai, Angew. Chem., Int. Ed. Engl. 41, 4783 (2002).
8. Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001).
9. J. Kong, H. Soh, A. Cassell, C. F. Quate, and H. Dai, Nature (London) 395, 878 (1998).
10. H. Soh, C. Quate, A. Morpurgo, C. M. Marcus, J. Kong, and H. Dai, Appl. Phys. Lett. 75, 627 (1999).
11. L. M. H. a. J. J. R. S. C. Martin, IEEE Electron Device Lett. 10, 325 (1989).
12. S. Ramo, J. R. Whinnery, and T. V. Duzer, Fields and Waves in Communication Electronics (Wiley, New York, 1994).
13. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
14. K. Chen, H. Wann, P. Ko, and C. Hu, IEEE Electron Device Lett. 17, 202 (1996).
15. M. Leskela and M. Ritala, Thin Solid Films 409, 138 (2002).
16. H. Kim, P. C. McIntyre, and K. C. Saraswat, Appl. Phys. Lett. 82, 106 (2003).
17. S.-Y. Lee, H. Kim, P. C. McIntyre, K. C. Saraswat, and J. S. Byun, Appl. Phys. Lett. 82, 2874 (2003).
18. T. Krishnamohan, Z. Krivokapic, and K. Saraswat, in IEEE Int. Conf. Simul. Semi. Proc. and Dev., 2003.
19. S. B. Samavedam, H. H. Tseng, P. J. Tobin, J. Mogab, S. Dakshina-Murthy, L. B. La, J. Smith, J. Schaeffer, M. Zavala, R. Martin, B. Y. Nguyen, L. Hebert, O. Adetutu, V. Dhandapani, T. Y. Luo, R. Garcia, P. Abramowitz, M. Moosa, D. C. Gilmer, C. Hobbs, W. J. Taylor, J. M. Grant, R. Hegde, S. Bagchi, E. Luckowski, V. Arunachalam, M. Azrak, VLSI Tecc. Dig. Tech. Papers 2002 Symp., p. 24.
20. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, Tech. Dig. - Int. Electron Devices Meet. (in press).