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Volumn 114, Issue 10, 2013, Pages

Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy

(13) Schörmann, Jörg a Hille, Pascal a Schäfer, Markus a Müßener, Jan a Becker, Pascal a Klar, Peter J a Kleine Boymann, Matthias a Rohnke, Marcus a De La Mata, Maria b Arbiol, Jordi b,c Hofmann, Detlev M a Teubert, Jörg a Eickhoff, Martin a

a JUSTUS LIEBIG UNIVERSITY (Germany)

b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC (Spain)

c INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BURSTEIN-MOSS SHIFT; ENERGY DISPERSIVE X RAY SPECTROSCOPY; EXCITON LOCALIZATION; EXCITONIC EMISSION; LINEAR RELATIONSHIPS; PHOTOLUMINESCENCE ANALYSIS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY;

EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; SECONDARY ION MASS SPECTROMETRY; X RAY SPECTROSCOPY;

GERMANIUM;

EID: 84884955749 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4820264 Document Type: Article

Times cited : (47)

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