Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Dmowski, L H ^a   Baj, M ^b   Konczewicz, L ^c   Suski, T ^a   Maude, D K ^d   Grzanka, S ^a   Wang, X Q ^e   Yoshikawa, A ^f  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c UNIVERSITÉ MONTPELLIER 2   (France)

^d GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^e PEKING UNIVERSITY   (China)

^f CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FREE ELECTRON; FREE HOLES; MAXIMUM ENTROPY; MOBILITY SPECTRUM ANALYSIS; P-TYPE; P-TYPE CONDUCTIVITY; SURFACE INVERSION LAYER;

SPECTRUM ANALYSIS;

MAXIMUM ENTROPY METHODS;

EID: 84864206898     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4710529     Document Type: Article

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