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Applied Physics Letters

Volumn 89, Issue 21, 2006, Pages

200 nm deep ultraviolet photodetectors based on AlN

(6) Li, J a Fan, Z Y a Dahal, R b Nakarmi, M L b Lin, J Y b Jiang, H X b

a III N Technology Inc (United States)

b KANSAS STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP ULTRAVIOLET (DUV) OPTOELECTRONIC MATERIALS; LOW DARK CURRENTS; METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS; PEAK RESPONSIVITY;

ALUMINUM NITRIDE; ELECTRIC BREAKDOWN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR METAL BOUNDARIES;

ULTRAVIOLET DETECTORS;

EID: 33845453636 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2397021 Document Type: Article

Times cited : (193)

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