Electrical transport properties of single undoped and n-type doped InN nanowires

Nanotechnology

Volumn 20, Issue 40, 2009, Pages

  Richter, T ^a   Luth H ^a   Schapers Th ^a   Meijers, R ^a   Jeganathan, K ^a   Estevez Hernandez S ^a   Calarco, R ^a   Marso, M ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF LUXEMBOURG   (Luxembourg)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; CURRENT VOLTAGE; ELECTRICAL TRANSPORT PROPERTIES; INN NANOWIRES; LINEAR DECREASE; LINEAR RELATION; OHMIC BEHAVIOR; QUADRATIC DEPENDENCE; SURFACE ACCUMULATION; TEMPERATURE RANGE;

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; TRANSPORT PROPERTIES;

CURRENT VOLTAGE CHARACTERISTICS;

INDIUM; NANOWIRE;

ARTICLE; CONDUCTANCE; ELECTRIC POTENTIAL; MEASUREMENT; PRIORITY JOURNAL; SEMICONDUCTOR; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; CHEMISTRY; ELECTRIC CONDUCTIVITY; METHODOLOGY; NANOTECHNOLOGY; TEMPERATURE;

ELECTRIC CONDUCTIVITY; NANOTECHNOLOGY; NANOWIRES; TEMPERATURE;

EID: 70349696706     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/40/405206     Document Type: Article

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