222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1176-1182

  Hirayama, Hideki ^a,b,c   Fujikawa, Sachie ^a,b,c   Noguchi, Norimichi ^a,b,c   Norimatsu, Jun ^a,b,c   Takano, Takayoshi ^a,d   Tsubaki, Kenji ^a,d   Kamata, Norihiko ^b,c  

^a RIKEN   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; ALN LAYERS; CW OPERATION; DEEP ULTRAVIOLET; DEEP-UV; DISLOCATION DENSITIES; EXTERNAL QUANTUM EFFICIENCY; GROWTH TECHNIQUES; HIGH QUALITY; INALGAN; INTEGRATED INTENSITIES; INTERNAL QUANTUM EFFICIENCY; MAXIMUM OUTPUT POWER; MULTIQUANTUM WELLS; P-TYPE; PULSED OPERATION; ROOM TEMPERATURE; THREADING DISLOCATION DENSITIES;

CORUNDUM; ELECTROLUMINESCENCE; FABRICATION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; TIME DIVISION MULTIPLEXING;

QUANTUM EFFICIENCY;

EID: 67649993974     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880961     Document Type: Article

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