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Volumn 98, Issue 4, 2011, Pages

Mg doped InN and confirmation of free holes in InN

(11) Wang, K a Miller, N b,c Iwamoto, R a Yamaguchi, T a Mayer, M A b,c Araki, T a Nanishi, Y a,d Yu, K M c Haller, E E b,c Walukiewicz, W c Ager III, J W c

a RITSUMEIKAN UNIVERSITY (Japan)

b Lawrence Berkeley National Laboratory (United States)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

d Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; EPILAYERS GROWN; FREE HOLES; HOLE DENSITIES; MG CONCENTRATIONS; MG-DOPED; MOBILE HOLES; P-TYPE; P-TYPE CONDUCTION; RADIO FREQUENCY PLASMA; SIGN-CHANGE; SYSTEMATIC INVESTIGATIONS; THERMOPOWER MEASUREMENTS; THERMOPOWERS;

EPITAXIAL GROWTH; HOLE MOBILITY; MOLECULAR BEAMS;

MOLECULAR BEAM EPITAXY;

EID: 79551627415 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3543625 Document Type: Article

Times cited : (47)

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