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Volumn 288, Issue 2, 2006, Pages 254-260

Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy

Author keywords

A1. Effective mass; A1. k p method; A1. Optical gap; A3. Cluster beam epitaxy; A3. Molecular beam epitaxy; B1. InN

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; FILM GROWTH; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; SEMICONDUCTING INDIUM COMPOUNDS; THICK FILMS;

EID: 32644450352     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.074     Document Type: Article
Times cited : (16)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.