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Volumn 288, Issue 2, 2006, Pages 254-260
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Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy
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Author keywords
A1. Effective mass; A1. k p method; A1. Optical gap; A3. Cluster beam epitaxy; A3. Molecular beam epitaxy; B1. InN
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Indexed keywords
ALUMINA;
ALUMINUM NITRIDE;
FILM GROWTH;
MOLECULAR BEAM EPITAXY;
PLASMA SOURCES;
SEMICONDUCTING INDIUM COMPOUNDS;
THICK FILMS;
EFFECTIVE MASS;
OPTICAL GAP;
PLASMA FREQUENCY;
THIN FILMS;
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EID: 32644450352
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.12.074 Document Type: Article |
Times cited : (16)
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References (12)
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