On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 310, Issue 18, 2008, Pages 4035-4045

  Ristić, Jelena ^a   Calleja, Enrique ^b   Fernández Garrido, Sergio ^b   Cerutti, Laurent ^c   Trampert, Achim ^d   Jahn, Uwe ^d   Ploog, Klaus H ^d  

^a EPFL   (Switzerland)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c UNIV MONTPELLIER   (France)

^d PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A2. Growth models; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC PHYSICS; ATOMS; CANNING; CATALYSIS; CRYSTAL GROWTH; DIFFUSION; DROP FORMATION; DROPS; ECOLOGY; EPITAXIAL GROWTH; FLUID MECHANICS; GALLIUM NITRIDE; LATTICE MISMATCH; MECHANISMS; METALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; NITROGEN; NONMETALS; NUCLEATION; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WIRES; SILICON;

A1. LOW-DIMENSIONAL STRUCTURES; A1. NANOSTRUCTURES; A2. GROWTH MODELS; A3. MOLECULAR BEAM EPITAXY; ALN BUFFER; ATOM DIFFUSION; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; DIFFUSION MECHANISMS; GA DIFFUSION; GROWTH CONDITIONS; GROWTH MECHANISMS; III NITRIDES; LATTICE MISMATCHING; NANO-COLUMNS; NUCLEATION AND GROWTH; NUCLEATION SITES; PLASMA ASSISTED MOLECULAR-BEAM EPITAXY; SPONTANEOUS GROWTH; VAPOR-LIQUID-SOLID MECHANISMS;

GALLIUM ALLOYS;

EID: 49949084016     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.057     Document Type: Article

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