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Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

Charge transport and trap characterization in individual GaSb nanowires

(5) Xu, Wei a Chin, Alan b Ye, Laura b Ning, C Z a,b Yu, Hongbin a

a Arizona State University (United States)

b NASA AMES RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE; LOW BIAS; NANOWIRE FET; OPERATING REGIMES; OXYGEN IMPURITY; QUANTITATIVE INFORMATION; SPACE-CHARGE-LIMITED CURRENT; TEMPERATURE DEPENDENT; TEMPERATURE VARIATION; THERMAL-ANNEALING; TRAP ENERGY;

GALLIUM ALLOYS;

NANOWIRES;

EID: 84862138519 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4720080 Document Type: Conference Paper

Times cited : (32)

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