메뉴 건너뛰기




Volumn , Issue , 2012, Pages 35-77

Ultra-Low-k by CVD: Deposition and Curing

Author keywords

Low k; PECVD; Porogen; UV curing; Young's modulus

Indexed keywords


EID: 84885807676     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9781119963677.ch2     Document Type: Chapter
Times cited : (19)

References (117)
  • 1
    • 84857058270 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors (I.T.R.S)
    • International Technology Roadmap for Semiconductors (ITRS), http://www.itrs.net.
  • 4
    • 75649126879 scopus 로고    scopus 로고
    • Low dielectric constant materials
    • Volksen, W., Miller, R.D. and Dubois, G. (2010) Low dielectric constant materials. Chem. Rev., 110, 56-110.
    • (2010) Chem. Rev. , vol.110 , pp. 56-110
    • Volksen, W.1    Miller, R.D.2    Dubois, G.3
  • 5
    • 84859308018 scopus 로고    scopus 로고
    • Porous dielectrics in microelectronic wiring applications
    • McGahay, V. (2010) Porous dielectrics in microelectronic wiring applications. Materials, 3, 536-562.
    • (2010) Materials , vol.3 , pp. 536-562
    • McGahay, V.1
  • 15
    • 1242284609 scopus 로고    scopus 로고
    • Temperature-resolved Fourier transform infrared study of condensation reactions and porogen decomposition in hybrid organosilicon porogen films
    • Burkey, D.D. and Gleason, K.K. (2004) Temperature-resolved Fourier transform infrared study of condensation reactions and porogen decomposition in hybrid organosilicon porogen films. J. Vac. Sci. Technol. A, 22, 61-70.
    • (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 61-70
    • Burkey, D.D.1    Gleason, K.K.2
  • 18
    • 78650896825 scopus 로고    scopus 로고
    • Crosslinking of porous SiOCH films involving Si-O-C bonds: impact of deposition and curing
    • Gourhant, O., Gerbaud, G., Zenasni, A., Favennec, L., Gonon, P. and Jousseaume, V. (2010) Crosslinking of porous SiOCH films involving Si-O-C bonds: impact of deposition and curing. J. Appl. Phys., 108, 124105.
    • (2010) J. Appl. Phys. , vol.108 , pp. 124105
    • Gourhant, O.1    Gerbaud, G.2    Zenasni, A.3    Favennec, L.4    Gonon, P.5    Jousseaume, V.6
  • 21
    • 48949088341 scopus 로고    scopus 로고
    • Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor
    • Grill, A. and Patel, V. (2008) Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor. J. Appl. Phys., 104, 024113.
    • (2008) J. Appl. Phys. , vol.104 , pp. 024113
    • Grill, A.1    Patel, V.2
  • 22
    • 28044448084 scopus 로고    scopus 로고
    • Study of plasma mechanism of hybrid a-SiOC:H low-k film deposition from decamethylcyclopentasiloxane and cyclohexene oxide
    • Castex, A., Favennec, L., Jousseaume, V., Bruat, J., Deval, J., Remiat, B., Passemard, G. and Pons, M. (2005) Study of plasma mechanism of hybrid a-SiOC:H low-k film deposition from decamethylcyclopentasiloxane and cyclohexene oxide. Microelectron. Engng, 82, 416.
    • (2005) Microelectron. Engng , vol.82 , pp. 416
    • Castex, A.1    Favennec, L.2    Jousseaume, V.3    Bruat, J.4    Deval, J.5    Remiat, B.6    Passemard, G.7    Pons, M.8
  • 23
    • 50849129130 scopus 로고    scopus 로고
    • Ultra low k films by using a plasma enhanced chemical vapor deposition porogen approach: study of the precursor reaction mechanisms
    • Castex, A., Jousseaume, V., Deval, J., Bruat, J., Favennec, L. and Passemard, G. (2008) Ultra low k films by using a plasma enhanced chemical vapor deposition porogen approach: study of the precursor reaction mechanisms, J. Vac. Sci. Technol. A, 26, 1343-1354.
    • (2008) J. Vac. Sci. Technol. A , vol.26 , pp. 1343-1354
    • Castex, A.1    Jousseaume, V.2    Deval, J.3    Bruat, J.4    Favennec, L.5    Passemard, G.6
  • 24
    • 2942536016 scopus 로고    scopus 로고
    • Organosilicon thin films deposited from cyclic and acyclic precursors using water as an oxidant
    • Burkey, D.D. and Gleason, K.K. (2004) Organosilicon thin films deposited from cyclic and acyclic precursors using water as an oxidant. J. Electrochemical Soc., 151, F105-F112.
    • (2004) J. Electrochemical Soc. , vol.151
    • Burkey, D.D.1    Gleason, K.K.2
  • 25
    • 34848869637 scopus 로고    scopus 로고
    • Ultralow-k using a plasma enhanced chemical vapor deposition porogen approach: matrix structure and porogen loading influences
    • Favennec, L., Jousseaume, V., Gerbaud, G., Zenasni, A. and Passemard, G. (2007) Ultralow-k using a plasma enhanced chemical vapor deposition porogen approach: matrix structure and porogen loading influences. J. Appl. Phys., 102, 064107.
    • (2007) J. Appl. Phys. , vol.102 , pp. 064107
    • Favennec, L.1    Jousseaume, V.2    Gerbaud, G.3    Zenasni, A.4    Passemard, G.5
  • 26
    • 0037648938 scopus 로고    scopus 로고
    • Structure and mechanical properties of thin films deposited from 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane and water
    • Burkey, D.D. and Gleason, K. (2003) Structure and mechanical properties of thin films deposited from 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane and water. J. Appl. Phys., 93, 5143-5150.
    • (2003) J. Appl. Phys. , vol.93 , pp. 5143-5150
    • Burkey, D.D.1    Gleason, K.2
  • 27
    • 0037321681 scopus 로고    scopus 로고
    • Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-k to extreme low-k interconnect materials
    • Grill, A. (2003) Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-k to extreme low-k interconnect materials. J. Appl. Phys., 93, 1785-1790.
    • (2003) J. Appl. Phys. , vol.93 , pp. 1785-1790
    • Grill, A.1
  • 30
    • 67650742480 scopus 로고    scopus 로고
    • Grazing incidence small angle X-ray scattering study of the structure of nanoporous ultralow-k dielectrics prepared by plasma enhanced chemical vapor deposition
    • Jousseaume, V., Gourhant, O., Zenasni, A., Maret, M. and Simon, J.-P. (2009) Grazing incidence small angle X-ray scattering study of the structure of nanoporous ultralow-k dielectrics prepared by plasma enhanced chemical vapor deposition. Appl. Phys. Lett., 95, 022901.
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 022901
    • Jousseaume, V.1    Gourhant, O.2    Zenasni, A.3    Maret, M.4    Simon, J.-P.5
  • 31
    • 34248374476 scopus 로고    scopus 로고
    • GISAXS study of porous dielectrics used in advanced microelectronic interconnections
    • J.P. Simon, J.P.,V. Jousseaume, V. and G. Rolland, G. (2007) GISAXS study of porous dielectrics used in advanced microelectronic interconnections. J. Appl. Cryst., 40, s363-s366.
    • (2007) J. Appl. Cryst. , vol.40
    • Simon, J.P.J.P.V.1    Jousseaume, V.2    Rolland, G.G.3
  • 33
    • 37549026231 scopus 로고    scopus 로고
    • The role of ultraviolet radiation during ultralow k films curing: strengthening mechanisms and sacrificial porogen removal
    • Zenasni, A., Jousseaume, V., Holliger, P., Favennec, L., Gourhant, O., Maury, P. and Gerbaud, G. (2007) The role of ultraviolet radiation during ultralow k films curing: strengthening mechanisms and sacrificial porogen removal. J. Appl. Phys., 102, 094107.
    • (2007) J. Appl. Phys. , vol.102 , pp. 094107
    • Zenasni, A.1    Jousseaume, V.2    Holliger, P.3    Favennec, L.4    Gourhant, O.5    Maury, P.6    Gerbaud, G.7
  • 36
    • 52149108936 scopus 로고    scopus 로고
    • Porosity generation using hydrogen plasma assisted thermal curing for ultra low-k material
    • Zenasni, A., Jousseaume, V., Gourhant, O., Favennec, L. and Maury, P. (2008) Porosity generation using hydrogen plasma assisted thermal curing for ultra low-k material. Microelectron. Engng, 85, 2102.
    • (2008) Microelectron. Engng , vol.85 , pp. 2102
    • Zenasni, A.1    Jousseaume, V.2    Gourhant, O.3    Favennec, L.4    Maury, P.5
  • 37
    • 0037011611 scopus 로고    scopus 로고
    • Supercritical carbon dioxide extraction to produce low-k plasma enhanced chemical vapour deposited dielectric films
    • Lubguban, J.A., Sun, J., Rajagopalan, T., Lahlouh, B., Simon, S.L. and Gangopadhyay, S. (2002) Supercritical carbon dioxide extraction to produce low-k plasma enhanced chemical vapour deposited dielectric films. Appl. Phys. Lett., 81, 4407-4409.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 4407-4409
    • Lubguban, J.A.1    Sun, J.2    Rajagopalan, T.3    Lahlouh, B.4    Simon, S.L.5    Gangopadhyay, S.6
  • 43
    • 84885808538 scopus 로고    scopus 로고
    • Handbook of Chemistry Physics 85th edn. C.R.C.
    • Lide, D.R. (ed.) (2004) Handbook of Chemistry and Physics, 85th edn, CRC, Boca Raton, Florida, pp. 9-52.
    • (2004) Boca Raton. Florida. , pp. 9-52
    • Lide, D.R.1
  • 47
    • 4344590531 scopus 로고    scopus 로고
    • Organosilanes in Radical Chemistry
    • John Wiley&Sons Ltd Chichester
    • Chatchilialoglu, C. (2004) Organosilanes in Radical Chemistry, John Wiley&Sons, Ltd, Chichester.
    • (2004)
    • Chatchilialoglu, C.1
  • 51
  • 53
    • 77952972912 scopus 로고    scopus 로고
    • Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening
    • Urbanowicz, A.M., Vanstreels, K., Verdonck, P., Shamiryan, D., De Gendt S.,and Baklanov, M.R. (2010) Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening. J. Appl. Phys., 107, 104122.
    • (2010) J. Appl. Phys. , vol.107 , pp. 104122
    • Urbanowicz, A.M.1    Vanstreels, K.2    Verdonck, P.3    Shamiryan, D.4    De Gendt, S.5    Baklanov, M.R.6
  • 54
    • 77949666266 scopus 로고    scopus 로고
    • Paramagnetic defect generation and microstructure change in porous low-k SiOCH films with vacuum baking
    • Tanbara, K. and Kamigaki, Y. (2010) Paramagnetic defect generation and microstructure change in porous low-k SiOCH films with vacuum baking. J. Electrochem. Soc., 157, G95-G99.
    • (2010) J. Electrochem. Soc. , vol.157
    • Tanbara, K.1    Kamigaki, Y.2
  • 55
    • 77955726804 scopus 로고    scopus 로고
    • Ultraviolet radiation effects on paramagnetic defects in low-k dielectrics for ultralarge scale integrated circuit interconnects
    • Bittel, B.C., Lenahan, P.M. and King, S.W. (2010) Ultraviolet radiation effects on paramagnetic defects in low-k dielectrics for ultralarge scale integrated circuit interconnects. Appl. Phys. Lett., 97, 063506.
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 063506
    • Bittel, B.C.1    Lenahan, P.M.2    King, S.W.3
  • 58
    • 0036776712 scopus 로고    scopus 로고
    • Non destructive characterization of porous low k dielectric films
    • Baklanov, M.R. and Mogilnikov, K.P. (2002) Non destructive characterization of porous low k dielectric films. Mircoelectron. Engng, 64, 335-349.
    • (2002) Mircoelectron. Engng , vol.64 , pp. 335-349
    • Baklanov, M.R.1    Mogilnikov, K.P.2
  • 59
    • 35348867387 scopus 로고    scopus 로고
    • Structural study of nanoporous ultra low-k dielectrics using complementary techniques: ellipsometric porosimetry X-ray reflectivity grazing incidence small-angle X-ray scattering
    • Jousseaume, V., Rolland, G., Babonneau, D. and Simon, J.P. (2007) Structural study of nanoporous ultra low-k dielectrics using complementary techniques: ellipsometric porosimetry, X-ray reflectivity and grazing incidence small-angle X-ray scattering. Appl. Surf. Sci., 254-2, 473- 479.
    • (2007) Appl. Surf. Sci. , vol.254 , Issue.2 , pp. 473-479
    • Jousseaume, V.1    Rolland, G.2    Babonneau, D.3    Simon, J.P.4
  • 60
    • 28044444592 scopus 로고    scopus 로고
    • Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties
    • Ciaramella, F., Jousseaume, V., Maitrejean, S., Verdier, M., Remiat, B., Zenasni, A. and Passemard, G. (2006) Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties. Thin Solid Films, 495, 124-129.
    • (2006) Thin Solid Films , vol.495 , pp. 124-129
    • Ciaramella, F.1    Jousseaume, V.2    Maitrejean, S.3    Verdier, M.4    Remiat, B.5    Zenasni, A.6    Passemard, G.7
  • 61
    • 0003910686 scopus 로고    scopus 로고
    • Cellular Solids: Structure Properties
    • 2nd edn.Cambridge University Press.
    • Gibson, L.J. and Ashby, M.F. (1997) Cellular Solids: Structure and Properties, 2nd edn, Cambridge University Press.
    • (1997)
    • Gibson, L.J.1    Ashby, M.F.2
  • 62
    • 0344084185 scopus 로고    scopus 로고
    • Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization
    • Grill, A. and Neumayer, D.A. (2003) Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization. J. Appl. Phys., 94, 6697-6707.
    • (2003) J. Appl. Phys. , vol.94 , pp. 6697-6707
    • Grill, A.1    Neumayer, D.A.2
  • 63
    • 0028494832 scopus 로고
    • Mechanisms of plasma polymerization of various silico-organic monomers
    • Rau, C. and Kulish, W. (1994) Mechanisms of plasma polymerization of various silico-organic monomers. Thin Solid Films, 249, 28.
    • (1994) Thin Solid Films , vol.249 , pp. 28
    • Rau, C.1    Kulish, W.2
  • 64
    • 0347682197 scopus 로고    scopus 로고
    • Chemical structure evolution of SiOCH films with low dielectric constant during PECVD and postannealing
    • Jun, X., Yang, C.S., Jang, H.R. and Choi, C.K. (2003) Chemical structure evolution of SiOCH films with low dielectric constant during PECVD and postannealing. J. Electrochemical Soc., 150, F206.
    • (2003) J. Electrochemical Soc. , vol.150
    • Jun, X.1    Yang, C.S.2    Jang, H.R.3    Choi, C.K.4
  • 65
    • 12744261363 scopus 로고    scopus 로고
    • Chemical bonding structure of low dielectric constant Si:O:C:H films characterized by solid-state NMR
    • Mabboux, P.-Y. and Gleason, K.K. (2005) Chemical bonding structure of low dielectric constant Si:O:C:H films characterized by solid-state NMR. J. Electrochemical Soc., 152, F7-F13.
    • (2005) J. Electrochemical Soc. , vol.152
    • Mabboux, P.-Y.1    Gleason, K.K.2
  • 66
    • 34248587495 scopus 로고    scopus 로고
    • Preparation and structure of porous dielectrics by plasma enhanced chemical vapour deposition
    • Gates, S.M., Neumayer, D.A., Sherwood, M.H., Grill, A., Wang, X. and Sankarapandian, M. (2007) Preparation and structure of porous dielectrics by plasma enhanced chemical vapour deposition, J. Appl. Phys., 101, 094103.
    • (2007) J. Appl. Phys. , vol.101 , pp. 094103
    • Gates, S.M.1    Neumayer, D.A.2    Sherwood, M.H.3    Grill, A.4    Wang, X.5    Sankarapandian, M.6
  • 67
    • 34547686648 scopus 로고    scopus 로고
    • Porous ultra low k deposited by PECVD: from deposition to material properties
    • Jousseaume, V., Favennec, L., Zenasni, A. and Gourhant, O. (2007) Porous ultra low k deposited by PECVD: from deposition to material properties. Surf. Coat. Technol., 201, 9248.
    • (2007) Surf. Coat. Technol. , vol.201 , pp. 9248
    • Jousseaume, V.1    Favennec, L.2    Zenasni, A.3    Gourhant, O.4
  • 68
    • 51449115467 scopus 로고    scopus 로고
    • P.E.C.V.D low-permittivity organosilicate glass coatings: adhesion. fracture mechanical properties
    • Lin, Y., Xiang, Y., Tsui, T. and Vlassak, J. PECVD low-permittivity organosilicate glass coatings: adhesion, fracture and mechanical properties. Acta Materialia, 56, 4932-4943.
    • Acta Materialia , vol.56 , pp. 4932-4943
    • Lin, Y.1    Xiang, Y.2    Tsui, T.3    Vlassak, J.4
  • 69
    • 52649178406 scopus 로고    scopus 로고
    • Bond structure in porous SiOCH low-k film fabricated by ultraviolet irradiation
    • Huang, C.H., Huang, H.L., Hung, C.I., Wang, N.F., Wang, Y.H. and Houng, M.P. (2008) Bond structure in porous SiOCH low-k film fabricated by ultraviolet irradiation. J. Appl. Phys., 47, 1532-1535.
    • (2008) J. Appl. Phys. , vol.47 , pp. 1532-1535
    • Huang, C.H.1    Huang, H.L.2    Hung, C.I.3    Wang, N.F.4    Wang, Y.H.5    Houng, M.P.6
  • 73
    • 69949164071 scopus 로고    scopus 로고
    • Depthprofiling of elastic inhomogeneities in transparent nanoporous low-k materials by picosecond ultrasonic interferometry
    • Mechri, C., Ruello, P., Breteau, J.M., Baklanov, M.R., Verdonck, P. and Gusev, V. (2009) Depthprofiling of elastic inhomogeneities in transparent nanoporous low-k materials by picosecond ultrasonic interferometry. Appl. Phys. Lett., 95, 091907.
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 091907
    • Mechri, C.1    Ruello, P.2    Breteau, J.M.3    Baklanov, M.R.4    Verdonck, P.5    Gusev, V.6
  • 74
    • 0037352897 scopus 로고    scopus 로고
    • Permittivity and conductivity of low-dielectric-constant SiOC:H films deposited by plasma-enhanced chemical vapour deposition
    • Gonon, P., Sylvestre, A., Meynen, H. and Van Cotthem, L. (2003) Permittivity and conductivity of low-dielectric-constant SiOC:H films deposited by plasma-enhanced chemical vapour deposition. J. Electrochem. Soc., 150, F47-F52.
    • (2003) J. Electrochem. Soc. , vol.150
    • Gonon, P.1    Sylvestre, A.2    Meynen, H.3    Van Cotthem, L.4
  • 75
    • 0001470318 scopus 로고    scopus 로고
    • Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition
    • Kim, J.Y., Hwang, M.S., Kim, Y.-S., Kim, H.J. and Lee, Y. (2001) Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition. J. Appl. Phys., 90, 2469-2473.
    • (2001) J. Appl. Phys. , vol.90 , pp. 2469-2473
    • Kim, J.Y.1    Hwang, M.S.2    Kim, Y.-S.3    Kim, H.J.4    Lee, Y.5
  • 76
    • 58149145428 scopus 로고    scopus 로고
    • What originates the dielectric permittivity of silicate- silsesquioxane hybrid thin films
    • C.S. Kim, C.S. and H.D. Jeong, H.D. (2008) What originates the dielectric permittivity of silicate- silsesquioxane hybrid thin films? J. Phys. Chem. B, 112, 16257-16260.
    • (2008) J. Phys. Chem. B , vol.112 , pp. 16257-16260
    • Kim, C.S.C.S.1    Jeong, H.D.H.D.2
  • 77
    • 70349897542 scopus 로고    scopus 로고
    • Porous ultra-low k dielectrics deposited by P.E.C.V.D: impact of the elaboration process on the structural properties on the different contributions of the dielectric constant
    • San Diego California.
    • O. Gourhant, O.,V. Jousseaume, V.,L. Favennec, L.,A. Zenasni, A.,P. Gonon, P. and G. Vincent, G. (2009) Porous ultra-low k dielectrics deposited by PECVD: impact of the elaboration process on the structural properties and on the different contributions of the dielectric constant. Proceedings of the Advanced Metallization Conference 2008, San Diego, California, pp. 537-542.
    • (2009) Proceedings of the Advanced Metallization Conference 2008 , pp. 537-542
    • Gourhant, O.O.V.1    Jousseaume, V.L.2    Favennec, L.A.3    Zenasni, A.P.4    Gonon, P.G.5    Vincent, G.6
  • 78
    • 77955519112 scopus 로고    scopus 로고
    • Capacitance measurements and k-value extractions of low-k films
    • Ciofi, I., Baklanov, M.R., Tokei, Z. and Beyer, G.P. (2010) Capacitance measurements and k-value extractions of low-k films. Microelectron. Engng, 87, 2391-2406.
    • (2010) Microelectron. Engng , vol.87 , pp. 2391-2406
    • Ciofi, I.1    Baklanov, M.R.2    Tokei, Z.3    Beyer, G.P.4
  • 83
    • 77953012729 scopus 로고    scopus 로고
    • Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation
    • Marsik, P., Verdonck, P., De Roest, D. and Baklanov, M.R. (2010) Porogen residues detection in optical properties of low-k dielectrics cured by ultraviolet radiation. Thin Solid Films, 518, 4266-4272.
    • (2010) Thin Solid Films , vol.518 , pp. 4266-4272
    • Marsik, P.1    Verdonck, P.2    De Roest, D.3    Baklanov, M.R.4
  • 84
    • 84885710297 scopus 로고    scopus 로고
    • Élaboration et caractÉrisation de matÉriaux à très faible constante diÉlectrique de type a-SiO.C.H ÉlaborÉs par P.E.C.V.D: application aux interconnexions des circuits intÉgrÉs
    • PhD thesis I.N.P Grenoble France.
    • Gourhant, O. (2008) Élaboration et caractÉrisation de matÉriaux à très faible constante diÉlectrique de type a-SiOCH ÉlaborÉs par PECVD: application aux interconnexions des circuits intÉgrÉs. PhD thesis, INP Grenoble, France.
    • (2008)
    • Gourhant, O.1
  • 85
    • 79952448066 scopus 로고    scopus 로고
    • Effect of porogen residue on electrical characteristics of ultra low-k materials
    • Baklanov, M.R., Zhao, L., Van Besien, E. and Pantouvak, M. (2011) Effect of porogen residue on electrical characteristics of ultra low-k materials. Microelectron. Engng, 88, 990-993.
    • (2011) Microelectron. Engng , vol.88 , pp. 990-993
    • Baklanov, M.R.1    Zhao, L.2    Van Besien, E.3    Pantouvak, M.4
  • 89
    • 1242309953 scopus 로고    scopus 로고
    • Nanocomposite low-k SiCOH films by direct PECVD using vinyltrimethylsilane
    • Kwak, S.-K., Jeong, K.-H. and Rhee, S.-W. (2004) Nanocomposite low-k SiCOH films by direct PECVD using vinyltrimethylsilane. J. Electrochem. Soc., 151, F11-F16.
    • (2004) J. Electrochem. Soc. , vol.151
    • Kwak, S.-K.1    Jeong, K.-H.2    Rhee, S.-W.3
  • 90
    • 34547908530 scopus 로고    scopus 로고
    • Electrical properties of low-dielectric-constant SiOC(-H) films prepared by plasma-enhanced chemical vapor deposition from methyltriethoxysilane and O2
    • Navamathavan, R., Oh, K.S., Chang, S.Y., Kim, S.H., Jang, Y.J.,A.S. Jung, A.S., Lee, H.J., Lee, K.M. and Choi, C.K. (2006) Electrical properties of low-dielectric-constant SiOC(-H) films prepared by plasma-enhanced chemical vapor deposition from methyltriethoxysilane and O2. Jpn. J. Appl. Phys., 45, 8435-8439.
    • (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 8435-8439
    • Navamathavan, R.1    Oh, K.S.2    Chang, S.Y.3    Kim, S.H.4    Jang, Y.J.A.S.5    Jung, A.S.6    Lee, H.J.7    Lee, K.M.8    Choi, C.K.9
  • 91
    • 0037348166 scopus 로고    scopus 로고
    • Plasma-enhanced chemical vapor deposition of low-k dielectric films using methylsilane, dimethylsilane, and trimethylsilane precursors
    • Wu, Q. and Gleason, K.K. (2003) Plasma-enhanced chemical vapor deposition of low-k dielectric films using methylsilane, dimethylsilane, and trimethylsilane precursors, J. Vac. Sci. Technol. A, 21, 388.
    • (2003) J. Vac. Sci. Technol. A , vol.21 , pp. 388
    • Wu, Q.1    Gleason, K.K.2
  • 92
    • 0034228666 scopus 로고    scopus 로고
    • Low-k Si-O-C-H composite films prepared by plasma enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor
    • Kim, Y.-H., Lee, S.-K. and Kim, H.J.J. (2000) Low-k Si-O-C-H composite films prepared by plasma enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor. J. Vac. Sci. Technol. A, 18, 1216.
    • (2000) J. Vac. Sci. Technol. A , vol.18 , pp. 1216
    • Kim, Y.-H.1    Lee, S.-K.2    Kim, H.J.J.3
  • 93
    • 34249885314 scopus 로고    scopus 로고
    • Chemical structure effects of ring-type siloxane precursor on properties of plasma-polymerized porous SiCOH films
    • Tada, M., Yamamoto, H., Ito, F., Takeuchi, T., Furutake, N. and Hayashi, Y. (2007) Chemical structure effects of ring-type siloxane precursor on properties of plasma-polymerized porous SiCOH films. J. Electrochem. Soc., 154, D354-D361.
    • (2007) J. Electrochem. Soc. , vol.154
    • Tada, M.1    Yamamoto, H.2    Ito, F.3    Takeuchi, T.4    Furutake, N.5    Hayashi, Y.6
  • 96
    • 84885773756 scopus 로고    scopus 로고
    • Low dielectric constant layers
    • B2 8 November 2005
    • Giles, K. (2005) Low dielectric constant layers, US Patent, 6,963,137 B2, 8 November 2005.
    • (2005) U.S Patent , vol.6 , Issue.963 , pp. 137
    • Giles, K.1
  • 97
    • 84885717393 scopus 로고    scopus 로고
    • ProcÉdÉ de prÉparation de couches minces de matÉriaux diÉlectriques nanoporeux
    • 20 July 2007
    • Jousseaume, V. (2007) ProcÉdÉ de prÉparation de couches minces de matÉriaux diÉlectriques nanoporeux, Patent FR2918997, 20 July 2007.
    • (2007) Patent
    • Jousseaume, V.1
  • 98
    • 4544366120 scopus 로고    scopus 로고
    • Characterization and integration of a CVD porous SiOCH (k < 2.5) with enhanced mechanical properties for 65 nm MOS interconnects and below
    • Chapelon, L.L., Arnal, V., Broekaart, M., Gosset, L.G., Vitiello, J. and Torres, J. (2004) Characterization and integration of a CVD porous SiOCH (k < 2.5) with enhanced mechanical properties for 65 nm MOS interconnects and below. Microelectron. Engng, 76, 1.
    • (2004) Microelectron. Engng , vol.76 , pp. 1
    • Chapelon, L.L.1    Arnal, V.2    Broekaart, M.3    Gosset, L.G.4    Vitiello, J.5    Torres, J.6
  • 100
    • 67650324661 scopus 로고    scopus 로고
    • Overview of strategies for the CVD of organic films and functional polymer layers
    • Sreenivasan, R. and Gleason, K.K. (2009) Overview of strategies for the CVD of organic films and functional polymer layers. Chem. Vap. Deposition, 15, 77-90.
    • (2009) Chem. Vap. Deposition , vol.15 , pp. 77-90
    • Sreenivasan, R.1    Gleason, K.K.2
  • 101
    • 64349115065 scopus 로고    scopus 로고
    • Surface modification of high aspect ratio structures with fluoropolymer coatings using chemical vapor deposition
    • Gupta, M. and Gleason, K.K. (2009) Surface modification of high aspect ratio structures with fluoropolymer coatings using chemical vapor deposition, Thin Solid Films, 517, 3547-3550.
    • (2009) Thin Solid Films , vol.517 , pp. 3547-3550
    • Gupta, M.1    Gleason, K.K.2
  • 102
    • 77249152231 scopus 로고    scopus 로고
    • Ultralow dielectric constant tetravinyltetramethylcyclotetrasiloxane films deposited by initiated chemical vapor deposition (iCVD)
    • Trujillo, N.J., Wu, Q. and Gleason, K.K. (2010) Ultralow dielectric constant tetravinyltetramethylcyclotetrasiloxane films deposited by initiated chemical vapor deposition (iCVD). Adv. Funct. Mater., 20, 607-616.
    • (2010) Adv. Funct. Mater. , vol.20 , pp. 607-616
    • Trujillo, N.J.1    Wu, Q.2    Gleason, K.K.3
  • 111
    • 3142552846 scopus 로고    scopus 로고
    • A new approach to ultralow-k dielectrics
    • Calvert, J.M. and Gallagher, M.K. (2003) A new approach to ultralow-k dielectrics. Semicond. Int., 26, 56.
    • (2003) Semicond. Int. , vol.26 , pp. 56
    • Calvert, J.M.1    Gallagher, M.K.2
  • 114
    • 33646497935 scopus 로고    scopus 로고
    • Plasma-enhancedchemical- vapor-deposited ultra low k for a post-integration porogen removal approach
    • Jousseaume, V., Favennec, L., Zenasni, A. and Passemard, G. (2006) Plasma-enhancedchemical- vapor-deposited ultra low k for a post-integration porogen removal approach. Appl. Phys. Lett., 88, 182908.
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 182908
    • Jousseaume, V.1    Favennec, L.2    Zenasni, A.3    Passemard, G.4
  • 116
    • 55349115059 scopus 로고    scopus 로고
    • Investigation of ULK (k = 2.5) damage by direct CMP process for 45 nm technology node, in Proceedings of the Advanced Metallization Conference 2007
    • Gall, S., Euvrard, C., Shhun, S., Maitrejean, S., Assous, M., Haumesser, P.-H. and Rivoire, M. (2008) Investigation of ULK (k = 2.5) damage by direct CMP process for 45 nm technology node, in Proceedings of the Advanced Metallization Conference 2007. Mater. Res. Soc. Conf. Proc., 23, 115-121.
    • (2008) Mater. Res. Soc. Conf. Proc. , vol.23 , pp. 115-121
    • Gall, S.1    Euvrard, C.2    Shhun, S.3    Maitrejean, S.4    Assous, M.5    Haumesser, P.-H.6    Rivoire, M.7
  • 117
    • 40849118377 scopus 로고    scopus 로고
    • Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps
    • Grill, A., Edelstein, D., Lane, M., Patel, V., Gates, S., Restaino, D. and Molis, S. (2008) Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps. J. Appl. Phys., 103, 054104.
    • (2008) J. Appl. Phys. , vol.103 , pp. 054104
    • Grill, A.1    Edelstein, D.2    Lane, M.3    Patel, V.4    Gates, S.5    Restaino, D.6    Molis, S.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.