Effect of porogen residue on electrical characteristics of ultra low-k materials

Microelectronic Engineering

Volumn 88, Issue 6, 2011, Pages 990-993

  Baklanov, Mikhail R ^a   Zhao, Larry ^a,b   Besien, Els Van ^a   Pantouvaki, Marianna ^a  

^a IMEC   (Belgium)

^b Intel Corporation Belgium   (Belgium)

Author keywords

Low k; Porogen residue

Indexed keywords

BREAKDOWN VOLTAGE; ELECTRICAL CHARACTERISTIC; LOW-K; LOW-K FILMS; LOW-K MATERIALS; LOW-LEAKAGE CURRENT; NANOCRYSTALLINES; POROGENS; SELF-ASSEMBLING; ULTRA LOW-K; ULTRA LOW-K MATERIALS; UV-CURING;

CURING; DIELECTRIC MATERIALS; FILMS; SILICA;

FILM PREPARATION;

EID: 79952448066     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.12.077     Document Type: Article

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